STMicroelectronics

STW75NF30

STW75NF30 Description

The STW75NF30 from STMicroelectronics is a 300V, 60A N-channel MOSFET housed in a TO-247-3 package, designed for high-power switching applications. Leveraging STripFET™ technology, it delivers superior performance with low on-resistance (45mΩ @ 10V, 30A) and high efficiency, making it ideal for demanding power conversion tasks. With a maximum power dissipation of 320W (Tc) and a gate charge (Qg) of 164nC @ 10V, it balances switching speed and thermal management. Although marked Obsolete, its robust design and compliance with ROHS3 and REACH standards ensure reliability in legacy systems.

STW75NF30 Features

• High Voltage & Current Rating: 300V Vdss and 60A continuous drain current (Tc) for rugged applications.
• Low Rds(on): 45mΩ @ 10V, 30A minimizes conduction losses, enhancing efficiency.
• Fast Switching: Optimized gate charge (Qg: 164nC) and input capacitance (Ciss: 5930pF) enable rapid transitions.
• Thermal Performance: 320W max power dissipation ensures stability under high loads.
• Robust Construction: ±20V Vgs(max) and TO-247-3 package for mechanical and electrical durability.
• Compliance: ROHS3, REACH Unaffected, ECCN EAR99, suitable for global markets.

STW75NF30 Applications

• Switched-Mode Power Supplies (SMPS): High-efficiency PFC and DC-DC converters.
• Motor Drives: Inverters and H-bridge configurations for industrial/automotive systems.
• Energy Systems: Solar inverters and UPS units requiring high-voltage handling.
• Industrial Automation: High-current switching in PLCs and robotic controls.
• Legacy Equipment: Maintenance and repair of older high-power electronics.

Conclusion of STW75NF30

The STW75NF30 stands out for its high power density, low Rds(on), and rugged TO-247-3 package, making it a strong choice for high-voltage, high-current applications. While obsolete, its STripFET™ technology and compliance with environmental standards ensure continued relevance in industrial, automotive, and energy systems. Engineers seeking a cost-effective, high-performance MOSFET for legacy or niche designs will find it a dependable solution.