STMicroelectronics_STU6NF10

STMicroelectronics
STU6NF10  
Single FETs, MOSFETs

STMicroelectronics
STU6NF10
278-STU6NF10
MOSFET N-CH 100V 6A IPAK
In Stock : 2863

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STU6NF10 Description

STU6NF10 Description

The STU6NF10 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high power and efficiency. With a drain-to-source voltage of 100V and a continuous drain current of 6A at 25°C, this device is capable of handling demanding power electronic applications. The STU6NF10 features a low on-resistance of 250mOhm at 3A and 10V, ensuring minimal power dissipation and high efficiency. The device is housed in an IPAK package, making it suitable for through-hole mounting in various electronic systems.

STU6NF10 Features

  • Low On-Resistance: The STU6NF10 boasts a low on-resistance of 250mOhm at 3A and 10V, which minimizes power dissipation and improves efficiency in power electronic applications.
  • High Drain-to-Source Voltage: With a drain-to-source voltage of 100V, this MOSFET can handle high voltage applications, making it suitable for various power electronic systems.
  • High Continuous Drain Current: The STU6NF10 can handle a continuous drain current of 6A at 25°C, ensuring reliable performance in demanding applications.
  • Low Gate Charge: The device has a low gate charge of 14nC at 10V, reducing switching losses and improving overall efficiency.
  • Robust Input Capacitance: The STU6NF10 features an input capacitance of 280pF at 25V, ensuring stable operation and reducing noise in high-frequency applications.
  • Compliance with Industry Standards: The device is compliant with RoHS3 and REACH standards, making it suitable for environmentally conscious applications.

STU6NF10 Applications

The STU6NF10 is ideal for a wide range of applications, including:

  1. Power Supplies: Due to its high voltage and current ratings, the STU6NF10 is well-suited for power supply applications, such as switching power supplies and battery chargers.
  2. Motor Control: The device's low on-resistance and high current capabilities make it an excellent choice for motor control applications, including electric vehicles and industrial motor drives.
  3. Industrial Automation: The STU6NF10's robust performance and compliance with industry standards make it suitable for use in industrial automation systems, such as robotics and control systems.
  4. Renewable Energy Systems: The device's high voltage and current ratings, combined with its low on-resistance, make it ideal for use in renewable energy systems, such as solar inverters and wind power converters.

Conclusion of STU6NF10

The STU6NF10 is a versatile and high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of low on-resistance, high voltage and current ratings, and compliance with industry standards. Its unique features and advantages make it an ideal choice for a wide range of power electronic applications, including power supplies, motor control, industrial automation, and renewable energy systems. With its robust performance and compliance with environmental standards, the STU6NF10 is a reliable and efficient solution for demanding electronic systems.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STU6NF10 Documents

Download datasheets and manufacturer documentation for STU6NF10

Ersa ST(D,U)6NF10      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STU6NF10 View All Specifications      
Ersa ST(D,U)6NF10      

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