The STB12NM50T4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current capabilities. This device features a D2PAK package, making it suitable for surface-mount applications. With a drain-to-source voltage (Vdss) of 550V and a continuous drain current (Id) of 12A at 25°C, the STB12NM50T4 is ideal for demanding power management and switching applications.
STB12NM50T4 Features
High Voltage and Current Ratings: The STB12NM50T4 boasts a Vdss of 550V and an Id of 12A, making it suitable for high-power applications.
Low On-Resistance: With an Rds(on) of 350mOhm at 6A and 10V, this MOSFET offers low conduction losses, improving efficiency in power management applications.
Fast Switching Speed: The STB12NM50T4 has a low gate charge (Qg) of 39nC at 10V, enabling fast switching and reducing switching losses.
Robust Construction: This device is designed to handle a maximum power dissipation of 160W, making it suitable for high-power applications.
Compliance and Environmental Standards: The STB12NM50T4 is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.
Reliability: With a moisture sensitivity level (MSL) of 1 and an unlimited storage time, this MOSFET is designed for reliable performance in various environments.
STB12NM50T4 Applications
The STB12NM50T4 is ideal for a variety of applications, including:
Power Management: Due to its high voltage and current ratings, this MOSFET is suitable for power management in industrial and automotive applications.
Motor Control: The low on-resistance and fast switching capabilities make it an excellent choice for motor control applications, such as electric vehicles and industrial motor drives.
Switching Regulators: The STB12NM50T4 can be used in switching regulators for power conversion, offering high efficiency and low losses.
Inverters: This MOSFET is suitable for use in inverter applications, such as solar inverters and industrial power inverters, due to its high voltage and current ratings.
Conclusion of STB12NM50T4
The STB12NM50T4 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding power management and switching applications. With its high voltage and current ratings, low on-resistance, and fast switching capabilities, this device offers a reliable and efficient solution for various applications, including power management, motor control, switching regulators, and inverters. Its compliance with environmental standards and robust construction make it an ideal choice for high-performance applications in the electronics industry.
Tech Specifications
Unit Weight
Configuration
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant
STB12NM50T4 Documents
Download datasheets and manufacturer documentation for STB12NM50T4
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service