STMicroelectronics

STB100N6F7  

Single FETs, MOSFETs

STB100N6F7 Description

The STB100N6F7 is a high-performance MOSFET (Metal Oxide) N-CH 60V 100A D2PAK from STMicroelectronics. This device is part of the STripFET™ F7 series and is designed for applications requiring high power dissipation and low on-resistance. With a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 100A at 25°C, the STB100N6F7 offers excellent performance in demanding applications.

STB100N6F7 Features

• High Power Dissipation: The STB100N6F7 can handle a maximum power dissipation of 125W (Tc), making it suitable for high-power applications.
• Low On-Resistance: With a maximum Rds On of 5.6mOhm at 50A and 10V, the STB100N6F7 provides low power loss and high efficiency.
• High Input Capacitance: The maximum input capacitance (Ciss) of 1980 pF at 25V ensures fast switching and reduced crosstalk.
• Low Gate Charge: The maximum gate charge (Qg) of 30 nC at 10V reduces switching losses and improves efficiency.
• Robust Gate Voltage Range: The device can operate with a maximum gate-source voltage (Vgs) of ±20V, providing flexibility in circuit design.
• Compliance with Industry Standards: The STB100N6F7 is REACH unaffected, RoHS3 compliant, and moisture sensitivity level (MSL) 1, ensuring compliance with environmental and safety regulations.

STB100N6F7 Applications

The STB100N6F7 is ideal for various high-power applications, including:

1. Industrial Motor Control: Due to its high current and voltage ratings, the STB100N6F7 is suitable for motor control applications in industrial settings.
2. Power Supplies: The device's high power dissipation and low on-resistance make it an excellent choice for power supply designs.
3. Automotive Applications: The STB100N6F7 can be used in automotive applications, such as electric vehicle charging systems and power management.
4. Renewable Energy Systems: The device's robustness and high power handling capabilities make it suitable for solar power inverters and wind turbine control systems.

Conclusion of STB100N6F7

The STB100N6F7 from STMicroelectronics is a powerful and versatile MOSFET designed for high-power applications. Its unique combination of high power dissipation, low on-resistance, and compliance with industry standards make it an excellent choice for demanding applications in various industries. With its performance benefits and wide range of applications, the STB100N6F7 stands out as a reliable and efficient solution for power electronics.

STB100N6F7 Documents

Download datasheets and manufacturer documentation for STB100N6F7

Datasheets :

STB100N6F7      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021      

HTML Datasheet :

STB100N6F7