STMicroelectronics_STL16N60M2

STMicroelectronics
STL16N60M2  
Single FETs, MOSFETs

STMicroelectronics
STL16N60M2
278-STL16N60M2
Ersa
STMicroelectronics-STL16N60M2-datasheets-8745540.pdf
MOSFET N-CH 600V 8A POWERFLAT HV
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STL16N60M2 Description

STL16N60M2 Description

The STL16N60M2 is a high-performance MOSFET (Metal Oxide) device from STMicroelectronics, designed for applications requiring high voltage and current capabilities. This N-channel MOSFET features a drain-to-source voltage (Vdss) of 600V and can handle continuous drain currents up to 8A at 25°C. With a maximum power dissipation of 52W and an operating temperature range of -55°C to 150°C (TJ), the STL16N60M2 is well-suited for demanding power management and motor control applications.

STL16N60M2 Features

  • High Voltage and Current Ratings: The STL16N60M2 boasts a drain-to-source voltage (Vdss) of 600V and can handle continuous drain currents up to 8A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: The device features a maximum on-resistance (Rds On) of 355mOhm at 4A and 10V, ensuring efficient power delivery with minimal losses.
  • Fast Switching Speed: With a maximum gate threshold voltage (Vgs(th)) of 4V at 250µA, the STL16N60M2 offers fast switching capabilities, reducing power consumption and improving overall system performance.
  • Robust Package: The PowerFlat™ (5x6) HV package provides excellent thermal performance and mechanical robustness, ensuring reliable operation in harsh environments.
  • Compliance and Certifications: The STL16N60M2 is REACH unaffected, RoHS3 compliant, and meets the requirements of various international regulations, including EAR99 and HTSUS.

STL16N60M2 Applications

The STL16N60M2 is an excellent choice for a wide range of applications, including:

  • Power Management: Its high voltage and current ratings make it suitable for power supply designs, where efficient power conversion and distribution are critical.
  • Motor Control: The low on-resistance and fast switching capabilities of the STL16N60M2 make it ideal for motor control applications, such as electric vehicles, industrial automation, and robotics.
  • Renewable Energy: The device's high voltage and power dissipation capabilities make it suitable for solar inverters and wind turbine control systems.
  • Industrial Automation: The STL16N60M2's robust package and high temperature range make it an ideal choice for industrial automation equipment, such as servo drives and motor controllers.

Conclusion of STL16N60M2

The STL16N60M2 from STMicroelectronics is a high-performance MOSFET designed for demanding applications requiring high voltage and current capabilities. Its unique combination of low on-resistance, fast switching speed, and robust package make it an ideal choice for power management, motor control, renewable energy, and industrial automation applications. With its compliance with various international regulations and certifications, the STL16N60M2 is a reliable and efficient solution for a wide range of high-power electronic systems.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
Product
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Length
Part Status
Maximum Gate Threshold Voltage (V)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL16N60M2 Documents

Download datasheets and manufacturer documentation for STL16N60M2

Ersa STL16N60M2      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      

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