The STF33N60DM2 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power electronics applications. Built using MDmesh™ DM2 technology, it offers a robust 650V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 24A (Tc). With an Rds(on) as low as 130mOhm @ 12A, 10V, it ensures efficient power handling with minimal conduction losses. The device features a low gate charge (Qg) of 43nC @ 10V and an input capacitance (Ciss) of 1870pF @ 100V, enabling fast switching performance. Packaged in a TO220FP through-hole format, it is suitable for high-power designs requiring thermal dissipation.
The STF33N60DM2 is ideal for high-efficiency power conversion systems, including:
The STF33N60DM2 combines high voltage capability, low Rds(on), and fast switching in a rugged TO220FP package. Its advanced MDmesh™ DM2 architecture ensures efficiency and reliability in demanding applications such as SMPS, motor drives, and renewable energy systems. With STMicroelectronics' proven quality standards, this MOSFET is a top choice for engineers seeking high-performance power switching solutions.
Download datasheets and manufacturer documentation for STF33N60DM2