STMicroelectronics_STF33N60DM2

STMicroelectronics
STF33N60DM2  
Single FETs, MOSFETs

STMicroelectronics
STF33N60DM2
278-STF33N60DM2
Ersa
STMicroelectronics-STF33N60DM2-datasheets-5559348.pdf
MOSFET N-CH 650V 24A TO220FP
In Stock : 60099

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STF33N60DM2 Description

STF33N60DM2 Description

The STF33N60DM2 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power electronics applications. Built using MDmesh™ DM2 technology, it offers a robust 650V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 24A (Tc). With an Rds(on) as low as 130mOhm @ 12A, 10V, it ensures efficient power handling with minimal conduction losses. The device features a low gate charge (Qg) of 43nC @ 10V and an input capacitance (Ciss) of 1870pF @ 100V, enabling fast switching performance. Packaged in a TO220FP through-hole format, it is suitable for high-power designs requiring thermal dissipation.

STF33N60DM2 Features

  • High Voltage & Current Rating: 650V Vdss and 24A Id for robust power handling.
  • Low On-Resistance: 130mOhm @ 12A, 10V for reduced conduction losses.
  • Fast Switching: Optimized gate charge (43nC) and input capacitance for high-frequency operation.
  • Thermal Efficiency: TO220FP package with 35W (Tc) power dissipation capability.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) moisture sensitivity.
  • Wide Gate Drive Range: Supports ±25V Vgs(max) for flexible drive circuitry.

STF33N60DM2 Applications

The STF33N60DM2 is ideal for high-efficiency power conversion systems, including:

  • Switched-Mode Power Supplies (SMPS): PFC stages, DC-DC converters.
  • Motor Drives & Inverters: Industrial motor control, servo drives.
  • Renewable Energy Systems: Solar inverters, wind turbine converters.
  • UPS & Industrial Power Systems: High-voltage switching applications.
    Its MDmesh™ DM2 technology provides superior switching performance and thermal stability compared to standard MOSFETs, making it suitable for high-frequency, high-power designs.

Conclusion of STF33N60DM2

The STF33N60DM2 combines high voltage capability, low Rds(on), and fast switching in a rugged TO220FP package. Its advanced MDmesh™ DM2 architecture ensures efficiency and reliability in demanding applications such as SMPS, motor drives, and renewable energy systems. With STMicroelectronics' proven quality standards, this MOSFET is a top choice for engineers seeking high-performance power switching solutions.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Forward Transconductance - Min
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF33N60DM2 Documents

Download datasheets and manufacturer documentation for STF33N60DM2

Ersa STF33N60DM2      

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