STMicroelectronics
STD1NK80ZT4
Single FETs, MOSFETs
STD1NK80ZT4
278-STD1NK80ZT4
MOSFET N-CH 800V 1A DPAK
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STD1NK80ZT4 Description
The STD1NK80ZT4 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including high voltage switching and motor control.
Description:
The STD1NK80ZT4 is an N-channel enhancement mode MOSFET transistor with a drain-source voltage (VDS) of 800V and a continuous drain current (ID) of 4.2A. It features a low on-state resistance (RDS(on)) of 0.08 ohms maximum at a gate-source voltage (VGS) of 10V.
Features:
- High voltage operation: The STD1NK80ZT4 is designed to operate at high voltages, making it suitable for use in applications that require high voltage switching.
- Low on-state resistance: The low on-state resistance of the STD1NK80ZT4 allows for efficient power switching with minimal power loss.
- High input impedance: The high input impedance of the STD1NK80ZT4 allows for easy drive and control of the device.
- Robust construction: The STD1NK80ZT4 is built with a robust construction that provides excellent thermal performance and reliability.
Applications:
The STD1NK80ZT4 is suitable for use in a variety of applications, including:
- High voltage switching: The high voltage rating of the STD1NK80ZT4 makes it well-suited for use in high voltage switching applications.
- Motor control: The low on-state resistance and high input impedance of the STD1NK80ZT4 make it an excellent choice for use in motor control applications.
- Power supplies: The STD1NK80ZT4 can be used in power supply applications that require high voltage switching.
- Industrial control: The robust construction and high voltage rating of the STD1NK80ZT4 make it suitable for use in industrial control applications.
Overall, the STD1NK80ZT4 is a high performance MOSFET transistor that offers excellent performance and reliability in a variety of high voltage applications.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STD1NK80ZT4 Documents
Download datasheets and manufacturer documentation for STD1NK80ZT4
STx1NK80ZR(R-AP,-1) Box Label Chg 28/Jul/2016 IRF630 View All Specifications STx1NK80ZR(R-AP,-1) Related Parts
Shopping Guide
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