The SCTWA20N120 from STMicroelectronics is a high-performance 1200V, 20A silicon carbide (SiC) power MOSFET designed for demanding power electronics applications. Leveraging SiCFET technology, it delivers superior efficiency, thermal performance, and reliability compared to traditional silicon-based MOSFETs. Packaged in the HiP247™ Long Leads through-hole format, this device is optimized for high-voltage switching with minimal conduction losses, making it ideal for industrial, renewable energy, and automotive systems.
High Voltage Rating: 1200V Vdss for robust operation in high-power circuits.
Fast Switching: Low gate charge (45nC max @ 20V) and input capacitance (650pF max @ 400V) enhance switching efficiency.
Thermal Performance: 175W (Tc) power dissipation and SiC technology enable high-temperature operation.
Reliability: ROHS3 Compliant, REACH Unaffected, and MSL 1 (Unlimited) for long-term durability.
Drive Compatibility: Optimized for 20V gate drive, simplifying integration with standard drivers.
SCTWA20N120 Applications
Industrial Power Supplies: High-efficiency PFC and DC-DC converters.
Renewable Energy: Solar inverters and wind turbine systems requiring high-voltage blocking.
Electric Vehicle (EV) Charging: Fast-switching capabilities reduce energy loss in onboard chargers.
Motor Drives: High-frequency inverters for industrial and traction applications.
High-Voltage SMPS: Telecom and server power supplies demanding low-loss switching.
Conclusion of SCTWA20N120
The SCTWA20N120 stands out as a high-reliability SiC MOSFET, combining low Rds(on), high voltage tolerance, and superior thermal performance. Its HiP247™ packaging ensures mechanical robustness, while SiCFET technology future-proofs designs for next-gen power systems. Ideal for engineers seeking efficiency gains in high-voltage, high-frequency applications, this device is a compelling choice for modern power electronics.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Material
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
SCTWA20N120 Documents
Download datasheets and manufacturer documentation for SCTWA20N120
PROCESS CHANGE NOTIFICATION (PDF) Product Change Notification 2024-06-17 (PDF)
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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