STMicroelectronics_SCTWA20N120
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STMicroelectronics
SCTWA20N120

278-SCTWA20N120
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Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
52 Weeks

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SCTWA20N120 Description

SCTWA20N120 Description

The SCTWA20N120 from STMicroelectronics is a high-performance 1200V, 20A silicon carbide (SiC) power MOSFET designed for demanding power electronics applications. Leveraging SiCFET technology, it delivers superior efficiency, thermal performance, and reliability compared to traditional silicon-based MOSFETs. Packaged in the HiP247™ Long Leads through-hole format, this device is optimized for high-voltage switching with minimal conduction losses, making it ideal for industrial, renewable energy, and automotive systems.

SCTWA20N120 Features

  • Low On-Resistance: 239mΩ (max) @ 10A, 20V, ensuring reduced conduction losses.
  • High Voltage Rating: 1200V Vdss for robust operation in high-power circuits.
  • Fast Switching: Low gate charge (45nC max @ 20V) and input capacitance (650pF max @ 400V) enhance switching efficiency.
  • Thermal Performance: 175W (Tc) power dissipation and SiC technology enable high-temperature operation.
  • Reliability: ROHS3 Compliant, REACH Unaffected, and MSL 1 (Unlimited) for long-term durability.
  • Drive Compatibility: Optimized for 20V gate drive, simplifying integration with standard drivers.

SCTWA20N120 Applications

  • Industrial Power Supplies: High-efficiency PFC and DC-DC converters.
  • Renewable Energy: Solar inverters and wind turbine systems requiring high-voltage blocking.
  • Electric Vehicle (EV) Charging: Fast-switching capabilities reduce energy loss in onboard chargers.
  • Motor Drives: High-frequency inverters for industrial and traction applications.
  • High-Voltage SMPS: Telecom and server power supplies demanding low-loss switching.

Conclusion of SCTWA20N120

The SCTWA20N120 stands out as a high-reliability SiC MOSFET, combining low Rds(on), high voltage tolerance, and superior thermal performance. Its HiP247™ packaging ensures mechanical robustness, while SiCFET technology future-proofs designs for next-gen power systems. Ideal for engineers seeking efficiency gains in high-voltage, high-frequency applications, this device is a compelling choice for modern power electronics.

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