STMicroelectronics_STB9NK90Z

STMicroelectronics
STB9NK90Z  
Single FETs, MOSFETs

STMicroelectronics
STB9NK90Z
278-STB9NK90Z
MOSFET N-CH 900V 8A D2PAK
In Stock : 970

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STB9NK90Z Description

STB9NK90Z Description

The STB9NK90Z from STMicroelectronics is a 900V N-channel MOSFET designed for high-voltage switching applications. Part of the SuperMESH™ series, it combines low on-resistance (1.3Ω @ 10V, 3.6A) with high breakdown voltage, making it ideal for power-efficient designs. Packaged in a D2PAK (TO-263) surface-mount form factor, it supports 8A continuous drain current (Id) at 25°C and dissipates up to 160W (Tc). With an input capacitance (Ciss) of 2115pF @ 25V and gate charge (Qg) of 72nC @ 10V, it ensures fast switching performance while minimizing losses.

STB9NK90Z Features

  • High Voltage Rating: 900V Vdss for robust performance in demanding applications.
  • Low Rds(on): 1.3Ω @ 10V, 3.6A reduces conduction losses, improving efficiency.
  • Optimized Gate Drive: 10V drive voltage ensures reliable switching with minimal gate charge (72nC).
  • Thermal Efficiency: 160W power dissipation (Tc) and D2PAK package enhance heat management.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for environmental and handling resilience.
  • Wide Vgs Range: ±30V gate-source voltage tolerance for flexible drive circuitry.

STB9NK90Z Applications

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and offline power supplies.
  • Industrial Motor Drives: Efficient switching in inverters and motor control systems.
  • Lighting Systems: LED drivers and ballast circuits requiring high-voltage handling.
  • Renewable Energy: Solar inverters and energy storage systems benefiting from low Rds(on).
  • Automotive Systems: Auxiliary power modules where reliability and efficiency are critical.

Conclusion of STB9NK90Z

The STB9NK90Z stands out for its high-voltage capability, low on-resistance, and thermal performance, making it a superior choice for power electronics. Its SuperMESH™ technology ensures efficiency in high-stress environments, while the D2PAK package offers mechanical and thermal advantages. Ideal for industrial, automotive, and energy applications, this MOSFET delivers a balance of performance, reliability, and cost-effectiveness.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STB9NK90Z Documents

Download datasheets and manufacturer documentation for STB9NK90Z

Ersa Mult Devices 27/Feb/2019      
Ersa STx9NK90Z      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB9NK90Z View All Specifications      
Ersa STx9NK90Z      
Ersa D2PAK Lead Modification 04/Oct/2013      

Shopping Guide

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