The STB9NK90Z from STMicroelectronics is a 900V N-channel MOSFET designed for high-voltage switching applications. Part of the SuperMESH™ series, it combines low on-resistance (1.3Ω @ 10V, 3.6A) with high breakdown voltage, making it ideal for power-efficient designs. Packaged in a D2PAK (TO-263) surface-mount form factor, it supports 8A continuous drain current (Id) at 25°C and dissipates up to 160W (Tc). With an input capacitance (Ciss) of 2115pF @ 25V and gate charge (Qg) of 72nC @ 10V, it ensures fast switching performance while minimizing losses.
The STB9NK90Z stands out for its high-voltage capability, low on-resistance, and thermal performance, making it a superior choice for power electronics. Its SuperMESH™ technology ensures efficiency in high-stress environments, while the D2PAK package offers mechanical and thermal advantages. Ideal for industrial, automotive, and energy applications, this MOSFET delivers a balance of performance, reliability, and cost-effectiveness.
Download datasheets and manufacturer documentation for STB9NK90Z