The STP20N65M5 from STMicroelectronics is a high-performance N-channel 650V, 18A power MOSFET designed for demanding switching applications. Built using advanced MDmesh™ V technology, it delivers superior efficiency with low conduction and switching losses. The device features a robust 190mΩ (max) Rds(on) at 9A, 10V, ensuring minimal power dissipation in high-current applications. With a gate charge (Qg) of 45nC (max) and an input capacitance (Ciss) of 1345pF (max), it offers fast switching performance, making it ideal for high-frequency power conversion. The TO-220 through-hole package provides excellent thermal management, supporting a maximum power dissipation of 130W (Tc).
The STP20N65M5 stands out as a high-reliability MOSFET for 650V applications, combining low Rds(on), fast switching, and excellent thermal performance. Its MDmesh™ V technology ensures efficiency in high-power designs, while the TO-220 package simplifies thermal management. Ideal for SMPS, motor drives, and renewable energy systems, this MOSFET is a top choice for engineers seeking a balance of performance, durability, and cost-effectiveness.
Download datasheets and manufacturer documentation for STP20N65M5