STMicroelectronics
STP9NK50Z  
Single FETs, MOSFETs

STMicroelectronics
STP9NK50Z
278-STP9NK50Z
MOSFET N-CH 500V 7.2A TO220AB
In Stock : 1126

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STP9NK50Z Description

STP9NK50Z Description

The STP9NK50Z is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power management and efficient switching capabilities. This MOSFET is part of the SuperMESH™ series, known for its excellent thermal performance and high current handling capabilities. With a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 7.2A at 25°C, the STP9NK50Z is suitable for a wide range of power electronics applications.

STP9NK50Z Features

  • High Voltage and Current Ratings: The STP9NK50Z can handle a drain-source voltage of up to 500V and a continuous drain current of 7.2A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 850mOhm at 3.6A and 10V, the STP9NK50Z offers low power dissipation and high efficiency in switching applications.
  • Robust Gate Drive: The device features a maximum gate-source voltage (Vgs) of ±30V, ensuring reliable operation across a wide range of gate drive conditions.
  • Low Gate Charge: A maximum gate charge (Qg) of 32nC at 10V contributes to fast switching speeds and reduced switching losses.
  • Excellent Thermal Performance: The SuperMESH™ technology used in the STP9NK50Z provides excellent thermal performance, ensuring stable operation under high-power conditions.
  • Environmental Compliance: The STP9NK50Z is compliant with REACH and RoHS3 regulations, making it suitable for environmentally conscious applications.

STP9NK50Z Applications

The STP9NK50Z is ideal for a variety of power electronics applications, including:

  • Power Supplies: The high voltage and current ratings make it suitable for use in power supply designs, where efficient power management is critical.
  • Motor Controls: The low on-resistance and fast switching capabilities of the STP9NK50Z make it an excellent choice for motor control applications, where precise current control is required.
  • Automotive Electronics: The robustness and reliability of the STP9NK50Z make it suitable for use in automotive electronics, where high voltage and current handling capabilities are essential.
  • Industrial Controls: The STP9NK50Z can be used in industrial control applications, where high-power switching and efficient power management are required.

Conclusion of STP9NK50Z

The STP9NK50Z is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current ratings, low on-resistance, and excellent thermal performance. Its compliance with environmental regulations and robust design make it an ideal choice for a wide range of power electronics applications, including power supplies, motor controls, automotive electronics, and industrial controls. With its unique features and advantages over similar models, the STP9NK50Z is a reliable and efficient solution for demanding power management tasks.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STP9NK50Z Documents

Download datasheets and manufacturer documentation for STP9NK50Z

Ersa ST(B,P)9NK50Z(FP,-1)      
Ersa STP9NK50Z View All Specifications      
Ersa ST(B,P)9NK50Z(FP,-1)      

Shopping Guide

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