The STW18NK80Z from STMicroelectronics is an N-channel 800V, 19A power MOSFET housed in a TO-247-3 package, designed for high-voltage switching applications. Leveraging SuperMESH™ technology, it delivers superior performance with low on-state resistance (Rds(on) of 380mΩ @ 10A, 10V) and high power dissipation capability (350W @ Tc). Although marked as obsolete, its robust design ensures reliability in demanding environments. The device features a gate charge (Qg) of 250nC @ 10V and an input capacitance (Ciss) of 6100pF @ 25V, optimizing switching efficiency. With a Vgs(max) of ±30V and a threshold voltage (Vgs(th) of 4.5V @ 150µA, it offers stable gate control. Compliant with ROHS3 and REACH standards, it is suitable for legacy designs requiring high-voltage tolerance and thermal resilience.
The STW18NK80Z remains a viable choice for engineers working with high-voltage, high-current applications despite its obsolete status. Its SuperMESH™ technology, low Rds(on), and high power dissipation make it suitable for industrial, automotive, and renewable energy systems. While newer alternatives may exist, its proven reliability and compliance with environmental standards ensure continued utility in legacy and specialized designs.
Download datasheets and manufacturer documentation for STW18NK80Z