STMicroelectronics_STP6NK60Z

STMicroelectronics
STP6NK60Z  
Single FETs, MOSFETs

STMicroelectronics
STP6NK60Z
278-STP6NK60Z
MOSFET N-CH 600V 6A TO220AB
In Stock : 1449

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STP6NK60Z Description

STP6NK60Z Description

The STP6NK60Z is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications that require high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 6A at 25°C, this device is well-suited for various power electronics applications. The STP6NK60Z features a low on-resistance (Rds On) of 1.2 Ohms at 3A and 10V, ensuring efficient power dissipation and minimal power loss. Additionally, it has a maximum gate-source voltage (Vgs) of ±30V, providing flexibility in gate drive requirements.

STP6NK60Z Features

  • High Voltage and Current Handling: The STP6NK60Z can handle a drain-to-source voltage of 600V and a continuous drain current of 6A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With an Rds On of 1.2 Ohms at 3A and 10V, this MOSFET offers efficient power dissipation and minimal power loss.
  • Flexible Gate Drive: A maximum gate-source voltage (Vgs) of ±30V allows for compatibility with various gate drive circuits.
  • Robust Construction: The STP6NK60Z is housed in a TO220AB package, providing a robust and reliable solution for high-power applications.
  • Environmental Compliance: This device is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.

STP6NK60Z Applications

The STP6NK60Z is ideal for a wide range of high-power applications, including:

  • Power Supplies: Its high voltage and current handling capabilities make it suitable for power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  • Motor Control: The STP6NK60Z can be used in motor control applications, such as electric vehicles (EVs), industrial motor drives, and robotics.
  • Industrial Automation: This MOSFET is well-suited for industrial automation applications, such as servo drives and programmable logic controllers (PLCs).
  • Renewable Energy: The STP6NK60Z can be used in renewable energy applications, such as solar inverters and wind turbine converters.

Conclusion of STP6NK60Z

The STP6NK60Z is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current handling capabilities, low on-resistance, and flexible gate drive. Its robust construction and environmental compliance make it an ideal choice for a wide range of high-power applications, including power supplies, motor control, industrial automation, and renewable energy. While it is not recommended for new designs, the STP6NK60Z remains a reliable solution for existing applications that require its specific performance characteristics.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STP6NK60Z Documents

Download datasheets and manufacturer documentation for STP6NK60Z

Ersa STx6NK60Z(FP-1)      
Ersa STP6NK60Z View All Specifications      
Ersa STx6NK60Z(FP-1)      

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