STMicroelectronics_STB46N30M5

STMicroelectronics
STB46N30M5  
Single FETs, MOSFETs

STMicroelectronics
STB46N30M5
278-STB46N30M5
Ersa
STMicroelectronics-STB46N30M5-datasheets-1101502.pdf
MOSFET N-CH 300V 53A D2PAK
In Stock : 305

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STB46N30M5 Description

STB46N30M5 Description

The STB46N30M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for automotive applications. It features a 300V drain-to-source voltage rating and can handle continuous drain currents of up to 53A at 25°C. The device is mounted on a surface mount package and is compliant with the latest environmental regulations, including RoHS3 and REACH.

STB46N30M5 Features

  • High Voltage Rating: The STB46N30M5 can withstand drain-to-source voltages of up to 300V, making it suitable for high-voltage applications.
  • High Current Handling: With a continuous drain current rating of 53A at 25°C, this MOSFET can handle demanding current loads.
  • Low On-State Resistance: The device has a maximum on-state resistance (Rds(on)) of 40mOhm at 26.5A and 10V, ensuring low power dissipation and high efficiency.
  • Fast Switching Speed: The gate charge (Qg) is a maximum of 95nC at 10V, enabling fast switching and reducing power losses.
  • Robust Operating Temperature: The STB46N30M5 can operate at junction temperatures up to 150°C, making it suitable for high-temperature environments.
  • Automotive Grade: Designed to meet the stringent requirements of the automotive industry, this MOSFET is ideal for use in automotive applications.
  • Environmental Compliance: The STB46N30M5 is compliant with RoHS3 and REACH regulations, ensuring environmental responsibility.

STB46N30M5 Applications

The STB46N30M5 is ideal for a variety of high-voltage, high-current applications in the automotive industry, including:

  • Power Management Systems: Used in battery management systems and power distribution units to control high currents and voltages.
  • Motor Control: Suitable for electric vehicle (EV) motor control applications, where high voltages and currents are required.
  • Inverters and Converters: Utilized in DC-DC converters and inverters for electric and hybrid vehicles.
  • Industrial Control Systems: Employed in high-voltage, high-current control systems for industrial machinery and equipment.

Conclusion of STB46N30M5

The STB46N30M5 from STMicroelectronics is a robust, high-performance N-Channel MOSFET designed for demanding automotive applications. Its high voltage and current ratings, combined with low on-state resistance and fast switching capabilities, make it an excellent choice for power management, motor control, and other high-voltage applications. With its automotive-grade design and environmental compliance, the STB46N30M5 is a reliable and efficient solution for the next generation of automotive electronics.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Operating Range
ECCN (EU)
RoHs compliant

STB46N30M5 Documents

Download datasheets and manufacturer documentation for STB46N30M5

Ersa Mult Devices Testing 10/May/2018      
Ersa STB46N30M5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB46N30M5      

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