STMicroelectronics_STW24NM60N

STMicroelectronics
STW24NM60N  
Single FETs, MOSFETs

STMicroelectronics
STW24NM60N
278-STW24NM60N
Ersa
STMicroelectronics-STW24NM60N-datasheets-12099547.pdf
MOSFET N-CH 600V 17A TO247
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STW24NM60N Description

STW24NM60N Description

The STW24NM60N is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for demanding applications requiring high voltage and current capabilities. This N-channel device features a drain-to-source voltage (Vdss) of 600V, capable of handling continuous drain current (Id) of 17A at 25°C. The device is mounted through-hole and is packaged in a tube, making it suitable for various electronic systems.

STW24NM60N Features

  • Technology: MOSFET (Metal Oxide), offering high efficiency and low power consumption.
  • Drain to Source Voltage (Vdss): 600V, suitable for high-voltage applications.
  • Current - Continuous Drain (Id): 17A at 25°C, providing robust current handling capabilities.
  • Rds On (Max): 190mOhm at 8A, 10V, ensuring low on-resistance for efficient power management.
  • Gate Charge (Qg) (Max): 46 nC at 10V, contributing to fast switching speeds.
  • Input Capacitance (Ciss) (Max): 1400 pF at 50V, minimizing capacitive effects.
  • Vgs (Max): ±30V, allowing for a wide range of gate voltages.
  • Vgs(th) (Max): 4V at 250µA, ensuring efficient gate threshold voltage.
  • Power Dissipation (Max): 125W (Tc), capable of handling high power dissipation.
  • Mounting Type: Through Hole, providing a reliable mechanical connection.
  • Package: Tube, suitable for various electronic systems.
  • Series: MDmesh™ II, known for its high performance and reliability.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.
  • RoHS Status: ROHS3 Compliant, adhering to environmental standards.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating low sensitivity to moisture.
  • ECCN: EAR99, categorizing the device for export control purposes.
  • HTSUS: 8541.29.0095, classifying the device for customs purposes.

STW24NM60N Applications

The STW24NM60N is ideal for applications requiring high voltage and current handling capabilities, such as:

  • Power Electronics: In power supplies, converters, and inverters where high voltage and current ratings are essential.
  • Industrial Control Systems: For motor drives and control circuits that demand robust performance and reliability.
  • Automotive Applications: In electric vehicle components, such as battery management systems and powertrain control units.
  • RF Power Amplifiers: For high-power radio frequency applications where high voltage and current capabilities are crucial.

Conclusion of STW24NM60N

The STW24NM60N is a high-performance MOSFET from STMicroelectronics, offering a combination of high voltage, current, and power capabilities. Its robust features, such as low on-resistance, fast switching speeds, and high power dissipation, make it suitable for a wide range of demanding applications in power electronics, industrial control systems, automotive, and RF power amplifiers. Despite being classified as obsolete, the STW24NM60N remains a reliable choice for applications requiring its specific performance characteristics.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STW24NM60N Documents

Download datasheets and manufacturer documentation for STW24NM60N

Ersa IPG-PWR/14/8674 02/Sep/2014      
Ersa STx24NM60N      
Ersa Mult Dev OBS 3/Jul/2020      

Shopping Guide

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