STMicroelectronics_STW24NM60N
original

STMicroelectronics
STW24NM60N

278-STW24NM60N
PDF Datasheet
600V N-CH MOSFET, 17A, 190mR, TO-247

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Tech Specifications

Package/Case
TO-247
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
190MR
Fall Time
37ns
Gate to Source Voltage (Vgs)
30V
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STW24NM60N Description

STW24NM60N Description

The STW24NM60N is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for demanding applications requiring high voltage and current capabilities. This N-channel device features a drain-to-source voltage (Vdss) of 600V, capable of handling continuous drain current (Id) of 17A at 25°C. The device is mounted through-hole and is packaged in a tube, making it suitable for various electronic systems.

STW24NM60N Features

  • Technology: MOSFET (Metal Oxide), offering high efficiency and low power consumption.
  • Drain to Source Voltage (Vdss): 600V, suitable for high-voltage applications.
  • Current - Continuous Drain (Id): 17A at 25°C, providing robust current handling capabilities.
  • Rds On (Max): 190mOhm at 8A, 10V, ensuring low on-resistance for efficient power management.
  • Gate Charge (Qg) (Max): 46 nC at 10V, contributing to fast switching speeds.
  • Input Capacitance (Ciss) (Max): 1400 pF at 50V, minimizing capacitive effects.
  • Vgs (Max): ±30V, allowing for a wide range of gate voltages.
  • Vgs(th) (Max): 4V at 250µA, ensuring efficient gate threshold voltage.
  • Power Dissipation (Max): 125W (Tc), capable of handling high power dissipation.
  • Mounting Type: Through Hole, providing a reliable mechanical connection.
  • Package: Tube, suitable for various electronic systems.
  • Series: MDmesh™ II, known for its high performance and reliability.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.
  • RoHS Status: ROHS3 Compliant, adhering to environmental standards.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating low sensitivity to moisture.
  • ECCN: EAR99, categorizing the device for export control purposes.
  • HTSUS: 8541.29.0095, classifying the device for customs purposes.

STW24NM60N Applications

The STW24NM60N is ideal for applications requiring high voltage and current handling capabilities, such as:

  • Power Electronics: In power supplies, converters, and inverters where high voltage and current ratings are essential.
  • Industrial Control Systems: For motor drives and control circuits that demand robust performance and reliability.
  • Automotive Applications: In electric vehicle components, such as battery management systems and powertrain control units.
  • RF Power Amplifiers: For high-power radio frequency applications where high voltage and current capabilities are crucial.

Conclusion of STW24NM60N

The STW24NM60N is a high-performance MOSFET from STMicroelectronics, offering a combination of high voltage, current, and power capabilities. Its robust features, such as low on-resistance, fast switching speeds, and high power dissipation, make it suitable for a wide range of demanding applications in power electronics, industrial control systems, automotive, and RF power amplifiers. Despite being classified as obsolete, the STW24NM60N remains a reliable choice for applications requiring its specific performance characteristics.

FAQ

What voltage specification is listed for STW24NM60N?
The listed voltage-related specification for STW24NM60N is 600V.
What operating temperature range does STW24NM60N support?
What package or case is STW24NM60N available in?
What is the mounting type of STW24NM60N?
Are there related or alternative parts for STW24NM60N?
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