The STP12NM50N from STMicroelectronics is an N-channel 500V MOSFET belonging to the MDmesh™ II series, designed for high-efficiency power switching applications. With a continuous drain current (Id) of 11A (at 25°C case temperature) and a low on-resistance (Rds(on)) of 380mΩ at 10V gate drive, this device ensures minimal conduction losses. Its 500V drain-source voltage (Vdss) rating makes it suitable for high-voltage circuits, while the ±25V gate-source voltage (Vgs) tolerance provides robust gate control flexibility.
STP12NM50N Features
High Voltage & Current Handling: 500V Vdss and 11A Id (Tc) for demanding power applications.
Low Rds(on): 380mΩ @ 10V Vgs, reducing power dissipation and improving efficiency.
Advanced MDmesh™ II Technology: Optimized for fast switching, low gate charge (Qg = 30nC @ 10V), and reduced switching losses.
Robust Thermal Performance: 100W max power dissipation (Tc) ensures reliability under high loads.
Wide Gate Drive Range: Supports up to ±25V Vgs, enhancing design flexibility.
Industry-Standard TO-220AB Package: Easy to mount and integrate into through-hole designs.
Compliance & Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) moisture sensitivity.
STP12NM50N Applications
Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and offline power supplies.
Motor Drives & Inverters: Efficient switching in industrial and automotive motor control systems.
Lighting Solutions: LED drivers and electronic ballasts requiring high-voltage switching.
Renewable Energy Systems: Solar inverters and battery management systems.
Industrial Power Systems: UPS, welding equipment, and high-power switching circuits.
Conclusion of STP12NM50N
The STP12NM50N is a high-performance 500V N-channel MOSFET optimized for efficiency, thermal management, and reliability in power electronics. Its low Rds(on), high voltage tolerance, and MDmesh™ II technology make it ideal for SMPS, motor drives, and renewable energy applications. While now obsolete, its robust design and proven performance continue to support legacy and specialized high-voltage designs. Engineers seeking alternatives should consider newer MDmesh™ generations for enhanced efficiency.
Tech Specifications
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
STP12NM50N Documents
Download datasheets and manufacturer documentation for STP12NM50N
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