STMicroelectronics_STD3NK60ZT4

STMicroelectronics
STD3NK60ZT4  
Single FETs, MOSFETs

STMicroelectronics
STD3NK60ZT4
278-STD3NK60ZT4
MOSFET N-CH 600V 2.4A DPAK
In Stock : 3803

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    STD3NK60ZT4 Description

    STD3NK60ZT4 Description

    The STD3NK60ZT4 is a high-performance MOSFET (Metal Oxide) device from STMicroelectronics, designed for applications requiring robust power management and efficient switching. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 2.4A at 25°C, this device is well-suited for demanding power electronics applications.

    STD3NK60ZT4 Features

    • 600V Drain-to-Source Voltage (Vdss): Capable of handling high voltage applications, ensuring reliable operation in demanding power electronics environments.
    • 2.4A Continuous Drain Current (Id) @ 25°C: Provides ample current capacity for a wide range of power management tasks.
    • 3.6Ohm Maximum Rds On @ 1.2A, 10V: Offers low on-resistance for efficient power dissipation and reduced power loss.
    • 4.5V Maximum Vgs(th) @ 50µA: Ensures reliable triggering and switching performance.
    • 45W Maximum Power Dissipation (Tc): Designed to handle high power dissipation, making it suitable for high-power applications.
    • DPAK Surface Mount Package: Facilitates easy integration into surface-mount technology (SMT) designs.
    • REACH Unaffected and ROHS3 Compliant: Meets stringent environmental and safety standards, ensuring compliance with international regulations.

    STD3NK60ZT4 Applications

    The STD3NK60ZT4 is ideal for a variety of applications where high voltage and current handling are required, including:

    • Power Supplies: In switch-mode power supplies (SMPS) and other power conversion systems.
    • Industrial Control Systems: For motor drives and other high-voltage control applications.
    • Automotive Electronics: In power management systems for electric and hybrid vehicles.
    • Renewable Energy Systems: For power electronics in solar inverters and wind power systems.

    Conclusion of STD3NK60ZT4

    The STD3NK60ZT4 from STMicroelectronics is a robust MOSFET designed for high-voltage and high-current applications. Its combination of high Vdss, low Rds On, and compliance with environmental standards make it an excellent choice for power electronics designers looking for a reliable and efficient solution. While it is marked as "Not For New Designs," it remains a viable option for existing designs or applications where this specific device is already in use, offering a proven track record of performance and reliability.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Height
    Maximum Operating Temperature
    Width
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Type
    Tab
    Length
    Forward Transconductance - Min
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Operating Temperature (°C) (max)
    Operating Temperature (°C) (min)
    Grade
    ECCN (EU)
    RoHs compliant

    STD3NK60ZT4 Documents

    Download datasheets and manufacturer documentation for STD3NK60ZT4

    Ersa STx3NK60Z(-1,FP)      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021       Reel Design Change 22/Aug/2022      
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    Ersa STx3NK60Z(-1,FP)      

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