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STMicroelectronics
STB11NM60N-1
278-STB11NM60N-1
PDF Datasheet
10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
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Tech Specifications
Package/Case
TO-262-3
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
600V
Fall Time
12ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
850pF
STB11NM60N-1 Description
N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole I2PAK
FAQ
Are there related or alternative parts for STB11NM60N-1?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is STB11NM60N-1?
What is the mounting type of STB11NM60N-1?
What operating temperature range does STB11NM60N-1 support?
What voltage specification is listed for STB11NM60N-1?
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