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STMicroelectronics
STB11NM60N-1
278-STB11NM60N-1
PDF Datasheet
10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
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Tech Specifications
Package/Case
TO-262-3
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
600V
Fall Time
12ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
850pF
STB11NM60N-1 Description
N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole I2PAK
FAQ
What is STB11NM60N-1?
STB11NM60N-1 is a Single FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does STB11NM60N-1 support?
Is STB11NM60N-1 currently in stock?
What is the mounting type of STB11NM60N-1?
What package or case is STB11NM60N-1 available in?
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