German
Japanese
Portuguese
Korea
Mexico
Dutch
STMicroelectronics
STB11NM60N-1
278-STB11NM60N-1
PDF Datasheet
10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
TO-262-3
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
600V
Fall Time
12ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
850pF
STB11NM60N-1 Description
N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole I2PAK
FAQ
What voltage specification is listed for STB11NM60N-1?
The listed voltage-related specification for STB11NM60N-1 is 600V.
Is STB11NM60N-1 currently in stock?
What is the mounting type of STB11NM60N-1?
What operating temperature range does STB11NM60N-1 support?
What package or case is STB11NM60N-1 available in?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
