STMicroelectronics_STN1NK60Z

STMicroelectronics
STN1NK60Z  
Single FETs, MOSFETs

STMicroelectronics
STN1NK60Z
278-STN1NK60Z
MOSFET N-CH 600V 300MA SOT223
In Stock : 5240

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    STN1NK60Z Description

    STN1NK60Z is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for high voltage applications and offers several features that make it suitable for a wide range of applications.

    Description:

    The STN1NK60Z is an N-channel enhancement mode field effect transistor (FET) with a voltage rating of 600V and a continuous drain current of 2.3A. It is available in a TO-220 package, which is a popular and widely used package for power transistors.

    Features:

    1. High voltage rating: The STN1NK60Z can handle voltages up to 600V, making it suitable for high voltage applications.
    2. Low on-state resistance: The on-state resistance (RDS(on)) of the STN1NK60Z is low, which helps to minimize power dissipation and improve efficiency.
    3. High switching speed: The STN1NK60Z has a fast switching speed, which makes it suitable for applications that require rapid switching.
    4. Robust design: The transistor is designed to withstand high voltage transients and has built-in protection against over-voltage, over-current, and over-temperature conditions.

    Applications:

    The STN1NK60Z is suitable for a wide range of applications that require high voltage and high current handling capabilities. Some of the common applications include:

    1. Power switching: The STN1NK60Z can be used in power switching applications such as motor control, power supplies, and battery chargers.
    2. Motor control: The high voltage and current handling capabilities of the STN1NK60Z make it suitable for controlling the speed and direction of motors in various applications.
    3. Inverters: The STN1NK60Z can be used in inverters for converting DC power to AC power, which is commonly used in renewable energy systems and power backup systems.
    4. Automotive applications: The robust design and high voltage handling capabilities of the STN1NK60Z make it suitable for use in automotive applications such as electric vehicle powertrains and battery management systems.

    In summary, the STN1NK60Z is a high voltage N-channel MOSFET transistor that offers several features such as low on-state resistance, high switching speed, and robust design. It is suitable for a wide range of applications that require high voltage and high current handling capabilities, including power switching, motor control, inverters, and automotive applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Height
    Maximum Operating Temperature
    Width
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Type
    Tab
    Length
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Operating Temperature (°C) (max)
    Operating Temperature (°C) (min)
    Grade
    ECCN (EU)
    RoHs compliant

    STN1NK60Z Documents

    Download datasheets and manufacturer documentation for STN1NK60Z

    Ersa PROCESS CHANGE NOTIFICATION (PDF)       Product Change Notification (PDF)      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
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