STMicroelectronics_STB33N60M2

STMicroelectronics
STB33N60M2  
Single FETs, MOSFETs

STMicroelectronics
STB33N60M2
278-STB33N60M2
Ersa
STMicroelectronics-STB33N60M2-datasheets-1553097.pdf
MOSFET N-CH 600V 26A D2PAK
In Stock : 2312

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STB33N60M2 Description

STB33N60M2 Description

The STB33N60M2 is a high-performance N-channel MOSFET from STMicroelectronics, designed for applications requiring high power and efficiency. This MOSFET features a D2PAK package, making it suitable for surface mount applications. With a drain-to-source voltage of 600V and a continuous drain current of 26A at 25°C, the STB33N60M2 is capable of handling high power loads in various electronic devices.

STB33N60M2 Features

  • 600V Drain-to-Source Voltage (Vdss): The STB33N60M2 can withstand high voltages, making it ideal for applications with high voltage requirements.
  • 26A Continuous Drain Current (Id) @ 25°C: This MOSFET can handle a continuous drain current of 26A, ensuring efficient power handling in various applications.
  • 125mOhm Rds On (Max) @ 13A, 10V: The low on-resistance of the STB33N60M2 contributes to its high efficiency and power handling capabilities.
  • 4V Vgs(th) (Max) @ 250µA: The threshold voltage of the STB33N60M2 is low, allowing for easy gate drive and reduced power consumption.
  • 1781 pF Input Capacitance (Ciss) (Max) @ 100V: The high input capacitance of the STB33N60M2 ensures fast switching and reduced switching losses.
  • 45.5 nC Gate Charge (Qg) (Max) @ 10V: The low gate charge of the STB33N60M2 contributes to its fast switching capabilities and reduced power dissipation.
  • 190W Power Dissipation (Max): The STB33N60M2 can dissipate up to 190W of power, making it suitable for high-power applications.

STB33N60M2 Applications

The STB33N60M2 is ideal for various high-power applications, including:

  1. Power Supplies: Due to its high voltage and current ratings, the STB33N60M2 is suitable for use in power supply designs, such as switching power supplies and power converters.
  2. Motor Control: The STB33N60M2 can be used in motor control applications, such as electric vehicles, industrial motor drives, and robotics.
  3. Industrial Automation: The high power handling capabilities of the STB33N60M2 make it suitable for use in industrial automation systems, such as servo drives and programmable logic controllers.
  4. Renewable Energy: The STB33N60M2 can be used in renewable energy applications, such as solar inverters and wind turbine converters.

Conclusion of STB33N60M2

The STB33N60M2 is a high-performance N-channel MOSFET from STMicroelectronics, offering excellent power handling capabilities and fast switching speeds. Its unique features, such as low on-resistance, high input capacitance, and low gate charge, make it an ideal choice for high-power applications in various industries. With its D2PAK package and surface mount capabilities, the STB33N60M2 is a versatile and reliable solution for demanding electronic devices.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STB33N60M2 Documents

Download datasheets and manufacturer documentation for STB33N60M2

Ersa STB33N60M2      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB33N60M2      
Ersa STx33N60M2 Datasheet Chg 31/May/2019      

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