STMicroelectronics

STP60NF06L

STP60NF06L Description

The STP60NF06L is a high-performance MOSFET (Metal Oxide) device from STMicroelectronics, designed for applications requiring high power and efficiency. With a drain to source voltage (Vdss) of 60V and a continuous drain current (Id) of 60A at 25°C, this N-channel device is well-suited for demanding power management tasks. The STP60NF06L features a low on-resistance (Rds On) of 14mOhm at 30A and 10V, ensuring minimal power loss and high efficiency. Its gate charge (Qg) is 66nC at 4.5V, contributing to fast switching speeds and reduced power consumption.

STP60NF06L Features

• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Continuous Drain Current (Id): 60A at 25°C
• On-Resistance (Rds On): 14mOhm at 30A and 10V
• Gate Charge (Qg): 66nC at 4.5V
• Input Capacitance (Ciss): 2000pF at 25V
• Gate-Source Voltage (Vgs): ±15V
• Gate Threshold Voltage (Vgs(th)): 1V at 250µA
• Power Dissipation (Max): 110W (Tc)
• Mounting Type: Through Hole
• Package: Tube
• Series: STripFET™ II

STP60NF06L Applications

The STP60NF06L's robust performance and low on-resistance make it ideal for a variety of applications, including:

• Power Supplies: Efficiently manage power in high-current applications.
• Motor Controls: Reliable operation in motor drive circuits.
• Industrial Automation: High power and efficiency in automation systems.
• Renewable Energy: Solar panel inverters and wind turbine power electronics.

Conclusion of STP60NF06L

The STP60NF06L from STMicroelectronics stands out for its high power handling, low on-resistance, and fast switching capabilities. Its unique features, such as the STripFET™ II series technology, make it a superior choice for demanding applications in power management, motor control, and industrial automation. With its compliance to RoHS3 and REACH standards, the STP60NF06L is not only a high-performance device but also an environmentally responsible choice for electronic design engineers.