STMicroelectronics

STW21NM60N

STW21NM60N Description

The STW21NM60N is a MOSFET N-CH 600V 17A TO247-3 device manufactured by STMicroelectronics. This single FET is designed for high-performance applications requiring high voltage and current capabilities. With an obsolete status, it is important to consider alternative options for new designs. The STW21NM60N features a drain to source voltage of 600V, a continuous drain current of 17A at 25°C, and a maximum power dissipation of 140W. It operates within an operating temperature range of -55°C to 150°C and is compliant with the RoHS3 directive.

STW21NM60N Features

• High Voltage and Current Capabilities: The STW21NM60N can handle drain to source voltages up to 600V and continuous drain currents up to 17A at 25°C, making it suitable for high-power applications.
• Low On-Resistance: With a maximum Rds(on) of 220mOhm at 8.5A and 10V, the STW21NM60N offers low on-resistance for efficient power management.
• Robust Gate Drive: The device has a maximum gate-source voltage of ±25V, ensuring reliable operation across a wide range of gate drive conditions.
• Low Gate Charge: The STW21NM60N features a low gate charge of 66nC at 10V, contributing to faster switching speeds and reduced power losses.
• Through Hole Mounting: The device is available in a through-hole TO247-3 package, providing a secure and reliable connection in various applications.

STW21NM60N Applications

The STW21NM60N is ideal for applications requiring high voltage and current handling capabilities, such as:

• Power Supplies: The high voltage and current ratings make it suitable for power supply designs, including switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
• Industrial Control: The device's robust performance characteristics make it suitable for motor control and other industrial control applications.
• Automotive Applications: The STW21NM60N can be used in automotive applications, such as electric vehicle (EV) charging systems and power management circuits.

Conclusion of STW21NM60N

The STW21NM60N is a high-performance MOSFET designed for demanding applications requiring high voltage and current capabilities. Its low on-resistance, robust gate drive, and low gate charge contribute to efficient power management and fast switching speeds. While the device is now obsolete, it remains a reliable choice for existing designs or as a reference for selecting alternative models with similar performance characteristics.