STMicroelectronics_STP19NM65N
original

STMicroelectronics
STP19NM65N

278-STP19NM65N
PDF Datasheet
650V 15.5A N-Channel Power MOSFET TO-220 270mR

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Tech Specifications

Package/Case
TO-220-3
Continuous Drain Current (ID)
15.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
270mR
Fall Time
26ns
Gate to Source Voltage (Vgs)
25V
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STP19NM65N Description

N-Channel 650 V 15.5A (Tc) 150W (Tc) Through Hole TO-220

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