STMicroelectronics_STB30N65M5

STMicroelectronics
STB30N65M5  
Single FETs, MOSFETs

STMicroelectronics
STB30N65M5
278-STB30N65M5
Ersa
STMicroelectronics-STB30N65M5-datasheets-11743322.pdf
MOSFET N-CH 650V 22A D2PAK
In Stock : 764

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STB30N65M5 Description

STB30N65M5 Description

The STB30N65M5 is a high-performance MOSFET N-CH 650V 22A D2PAK from STMicroelectronics. It is designed for applications requiring high power and efficiency. With its advanced technology and robust design, the STB30N65M5 offers excellent electrical characteristics and reliability. It is manufactured using STMicroelectronics' proprietary MDmesh™ V technology, ensuring superior performance and longevity.

STB30N65M5 Features

  • Technology: MOSFET (Metal Oxide) using STMicroelectronics' MDmesh™ V technology
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
  • Vgs (Max): ±25V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Power Dissipation (Max): 140W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • Package: D2PAK, Tape & Reel (TR)

STB30N65M5 Applications

The STB30N65M5 is ideal for a wide range of applications due to its high power rating and excellent electrical characteristics. Some specific use cases include:

  1. Industrial Motor Control: The high voltage and current ratings make it suitable for motor control applications in industrial settings.
  2. Power Supplies: The STB30N65M5 can be used in power supply designs requiring high efficiency and reliability.
  3. Automotive Applications: Its robust design and high temperature rating make it suitable for automotive applications, such as electric vehicle charging systems.
  4. Renewable Energy Systems: The STB30N65M5 can be used in solar inverters and wind turbine power electronics.

Conclusion of STB30N65M5

The STB30N65M5 from STMicroelectronics is a powerful and reliable MOSFET designed for high-power applications. Its advanced MDmesh™ V technology, high voltage and current ratings, and excellent electrical characteristics make it an ideal choice for a wide range of applications, including industrial motor control, power supplies, automotive systems, and renewable energy. The STB30N65M5's unique features and advantages over similar models, such as its low Rds On and high power dissipation, make it a preferred choice for demanding applications where performance and reliability are critical.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STB30N65M5 Documents

Download datasheets and manufacturer documentation for STB30N65M5

Ersa STx30N65M5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB30N65M5 View All Specifications      
Ersa STx30N65M5      
Ersa IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013      

Shopping Guide

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