STMicroelectronics_STY145N65M5

STMicroelectronics
STY145N65M5  
Single FETs, MOSFETs

STMicroelectronics
STY145N65M5
278-STY145N65M5
Ersa
STMicroelectronics-STY145N65M5-datasheets-12162374.pdf
MOSFET N-CH 650V 138A MAX247
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    STY145N65M5 Description

    STMicroelectronics' STY145N65M5 is a high-power, high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a wide range of applications. Here is a detailed description of the model, its features, and potential applications:

    Model Description:

    The STY145N65M5 is a member of the STPOWER MOSFET family, which is known for its robustness and reliability. It is a 650V N-channel power MOSFET with a continuous drain current (Id) of 145A. This MOSFET is designed to operate efficiently at high voltages and currents, making it suitable for a variety of power electronics applications.

    Features:

    1. High Voltage Rating: The STY145N65M5 is rated for a maximum drain-source voltage (Vds) of 650V, which allows it to handle high-voltage applications.

    2. High Current Capability: With a continuous drain current (Id) of 145A, this MOSFET is designed to handle high current loads.

    3. Low On-State Resistance (RDS(on)): The device has a low on-state resistance, which helps reduce power dissipation and improve efficiency in power conversion applications.

    4. High Switching Speed: The MOSFET is designed for fast switching, which is crucial for applications that require rapid changes in current or voltage.

    5. Integrated Protection Features: The device may include built-in protection features such as overvoltage, overcurrent, and thermal shutdown to enhance reliability and safety.

    6. Robust Package: Typically, high-power MOSFETs like the STY145N65M5 are housed in robust packages designed to withstand high temperatures and mechanical stresses.

    Applications:

    1. Motor Control: The high current and voltage ratings make the STY145N65M5 suitable for controlling the speed and direction of electric motors in various industrial and automotive applications.

    2. Power Supplies: In switch-mode power supplies (SMPS), this MOSFET can be used in the primary or secondary side for efficient energy conversion.

    3. Solar Inverters: The device's high voltage and current capabilities make it suitable for use in solar panel string inverters, where it can handle the power conversion from DC to AC.

    4. Battery Chargers: In high-power battery charging systems, the STY145N65M5 can be used in the charging circuit to manage the flow of current into the battery.

    5. UPS Systems: Uninterruptible power supply (UPS) systems require high-voltage, high-current components to manage the backup power. The STY145N65M5 can be used in the power conversion stages of such systems.

    6. Electric Vehicles (EVs): In the EV industry, this MOSFET can be used in the powertrain for managing the high currents and voltages involved in propulsion and regenerative braking.

    7. Industrial Automation: For controlling high-power actuators, relays, or other industrial machinery, the STY145N65M5 can provide efficient switching and control.

    Please note that the specific features and applications can vary based on the exact specifications and design of the STY145N65M5. It's always important to refer to the datasheet and consult with technical experts when selecting a component for a specific application.

    Tech Specifications

    Unit Weight
    Configuration
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Material
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STY145N65M5 Documents

    Download datasheets and manufacturer documentation for STY145N65M5

    Ersa STY145N65M5      
    Ersa STY145N65M5 View All Specifications      
    Ersa STY145N65M5      

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