STMicroelectronics_STF11N65M5

STMicroelectronics
STF11N65M5  
Single FETs, MOSFETs

STMicroelectronics
STF11N65M5
278-STF11N65M5
Ersa
STMicroelectronics-STF11N65M5-datasheets-9048158.pdf
MOSFET N-CH 650V 9A TO220FP
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STF11N65M5 Description

STF11N65M5 Description

The STF11N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for a wide range of applications in the electronics industry. This MOSFET is built using advanced Metal Oxide technology, ensuring high efficiency and reliability. With a maximum drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 9A at 25°C, the STF11N65M5 is capable of handling high voltage and current loads. Its low on-resistance (Rds On) of 480mOhm at 4.5A and 10V ensures minimal power loss and high efficiency in operation. The device is housed in a TO220FP package, making it suitable for through-hole mounting in various electronic systems.

STF11N65M5 Features

  • High Voltage and Current Handling: With a Vdss of 650V and Id of 9A, the STF11N65M5 can handle high voltage and current loads, making it ideal for applications requiring high power management.
  • Low On-Resistance: The low Rds On of 480mOhm at 4.5A and 10V ensures minimal power loss and high efficiency in operation.
  • Advanced Metal Oxide Technology: Built using advanced Metal Oxide technology, the STF11N65M5 offers high efficiency, reliability, and performance.
  • Wide Operating Temperature Range: The device can operate at temperatures up to 150°C (TJ), making it suitable for applications with high thermal demands.
  • RoHS3 Compliance: The STF11N65M5 is compliant with the RoHS3 directive, ensuring environmental friendliness and adherence to global regulations.
  • REACH Unaffected Status: The device is not affected by the REACH regulation, ensuring uninterrupted supply and availability.

STF11N65M5 Applications

The STF11N65M5 is ideal for a variety of applications in the electronics industry, including:

  1. Power Management: Due to its high voltage and current handling capabilities, the STF11N65M5 is suitable for power management applications in various electronic systems.
  2. Industrial Control: The device's high performance and reliability make it ideal for industrial control applications, such as motor control and power conversion.
  3. Automotive Electronics: The STF11N65M5 can be used in automotive electronics for applications like power windows, seat adjustment, and lighting systems.
  4. Telecommunications: The device's high efficiency and reliability make it suitable for power management in telecommunications equipment, such as base stations and switching systems.

Conclusion of STF11N65M5

The STF11N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current handling capabilities, low on-resistance, and advanced Metal Oxide technology. Its wide operating temperature range, RoHS3 compliance, and REACH unaffected status make it an ideal choice for a variety of applications in the electronics industry, including power management, industrial control, automotive electronics, and telecommunications. With its unique features and advantages over similar models, the STF11N65M5 is a reliable and efficient solution for high-performance electronic systems.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF11N65M5 Documents

Download datasheets and manufacturer documentation for STF11N65M5

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