STMicroelectronics_STF11N65M5
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STMicroelectronics
STF11N65M5

278-STF11N65M5
PDF Datasheet
650V 9A N-CH MOSFET TO-220FP 480mR RdsOn
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Tech Specifications

Package/Case
TO-220-3
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
480mR
Drain to Source Voltage (Vdss)
650V
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
644pF
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STF11N65M5 Description

STF11N65M5 Description

The STF11N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for a wide range of applications in the electronics industry. This MOSFET is built using advanced Metal Oxide technology, ensuring high efficiency and reliability. With a maximum drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 9A at 25°C, the STF11N65M5 is capable of handling high voltage and current loads. Its low on-resistance (Rds On) of 480mOhm at 4.5A and 10V ensures minimal power loss and high efficiency in operation. The device is housed in a TO220FP package, making it suitable for through-hole mounting in various electronic systems.

STF11N65M5 Features

  • High Voltage and Current Handling: With a Vdss of 650V and Id of 9A, the STF11N65M5 can handle high voltage and current loads, making it ideal for applications requiring high power management.
  • Low On-Resistance: The low Rds On of 480mOhm at 4.5A and 10V ensures minimal power loss and high efficiency in operation.
  • Advanced Metal Oxide Technology: Built using advanced Metal Oxide technology, the STF11N65M5 offers high efficiency, reliability, and performance.
  • Wide Operating Temperature Range: The device can operate at temperatures up to 150°C (TJ), making it suitable for applications with high thermal demands.
  • RoHS3 Compliance: The STF11N65M5 is compliant with the RoHS3 directive, ensuring environmental friendliness and adherence to global regulations.
  • REACH Unaffected Status: The device is not affected by the REACH regulation, ensuring uninterrupted supply and availability.

STF11N65M5 Applications

The STF11N65M5 is ideal for a variety of applications in the electronics industry, including:

  1. Power Management: Due to its high voltage and current handling capabilities, the STF11N65M5 is suitable for power management applications in various electronic systems.
  2. Industrial Control: The device's high performance and reliability make it ideal for industrial control applications, such as motor control and power conversion.
  3. Automotive Electronics: The STF11N65M5 can be used in automotive electronics for applications like power windows, seat adjustment, and lighting systems.
  4. Telecommunications: The device's high efficiency and reliability make it suitable for power management in telecommunications equipment, such as base stations and switching systems.

Conclusion of STF11N65M5

The STF11N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current handling capabilities, low on-resistance, and advanced Metal Oxide technology. Its wide operating temperature range, RoHS3 compliance, and REACH unaffected status make it an ideal choice for a variety of applications in the electronics industry, including power management, industrial control, automotive electronics, and telecommunications. With its unique features and advantages over similar models, the STF11N65M5 is a reliable and efficient solution for high-performance electronic systems.

FAQ

What package or case is STF11N65M5 available in?
STF11N65M5 is available in the TO-220-3 package / case.
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