STMicroelectronics_STD35P6LLF6

STMicroelectronics
STD35P6LLF6  
Single FETs, MOSFETs

STMicroelectronics
STD35P6LLF6
278-STD35P6LLF6
Ersa
STMicroelectronics-STD35P6LLF6-datasheets-917070.pdf
MOSFET P-CH 60V 35A DPAK
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    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    STD35P6LLF6 Description

    STMicroelectronics' STD35P6LLF6 is a high-performance, low-side MOSFET driver designed for use in a variety of industrial and automotive applications. It is a monolithic integrated circuit that provides a high sink/source current capability and is specifically designed to drive power MOSFETs and IGBTs with high switching speeds and low on-state resistance.

    Description:

    The STD35P6LLF6 is a high-voltage, low-side MOSFET driver that operates from a supply voltage range of 8V to 38V. It features a high input impedance and a low output impedance, making it suitable for use with a wide range of input signals and load conditions. The device is available in a compact 6-pin SOIC package, making it ideal for use in space-constrained applications.

    Features:

    • High sink/source current capability: The STD35P6LLF6 can provide up to ±2.5A of peak current to drive power MOSFETs and IGBTs.
    • Wide supply voltage range: The device operates from a supply voltage range of 8V to 38V, making it suitable for use in a variety of applications.
    • High input impedance: The STD35P6LLF6 has a high input impedance, allowing it to be used with a wide range of input signals.
    • Low output impedance: The device has a low output impedance, ensuring efficient power transfer to the load.
    • Short-circuit protection: The STD35P6LLF6 features built-in short-circuit protection to prevent damage to the device and the load in the event of a short circuit.
    • Thermal shutdown: The device includes a thermal shutdown feature that protects it from overheating in the event of a fault.

    Applications:

    The STD35P6LLF6 is suitable for use in a variety of industrial and automotive applications, including:

    • Motor control
    • Switch mode power supplies (SMPS)
    • Battery management systems (BMS)
    • Solar panel charge controllers
    • Inverters
    • Industrial control systems

    In summary, the STMicroelectronics' STD35P6LLF6 is a high-performance, low-side MOSFET driver that offers a range of features and benefits, making it an ideal choice for use in a variety of industrial and automotive applications.

    Tech Specifications

    Unit Weight
    Configuration
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Process Technology
    Package Height
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Maximum Diode Forward Voltage (V)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Operating Junction Temperature (°C)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STD35P6LLF6 Documents

    Download datasheets and manufacturer documentation for STD35P6LLF6

    Ersa Product Change Notification (PDF)      

    Shopping Guide

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