STMicroelectronics_STF16N65M2

STMicroelectronics
STF16N65M2  
Single FETs, MOSFETs

STMicroelectronics
STF16N65M2
278-STF16N65M2
Ersa
STMicroelectronics-STF16N65M2-datasheets-7446172.pdf
MOSFET N-CH 650V 11A TO220FP
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    STF16N65M2 Description

    STF16N65M2 Description

    The STF16N65M2 is a high-performance MOSFET N-CH 650V 11A TO220FP manufactured by STMicroelectronics. This single FET is designed to deliver exceptional performance in various electronic applications. With a maximum drain-to-source voltage of 650V and a continuous drain current of 11A at 25°C, the STF16N65M2 offers robust power handling capabilities. Its low on-resistance of 360mOhm at 5.5A and 10V ensures efficient power dissipation, making it suitable for high-current applications.

    STF16N65M2 Features

    • Technology: MOSFET (Metal Oxide) - Provides excellent electrical characteristics and reliability.
    • Input Capacitance (Ciss): 718 pF @ 100 V - Minimizes input capacitance, reducing power loss and improving switching speed.
    • Gate Charge (Qg): 19.5 nC @ 10 V - Low gate charge reduces switching losses and improves efficiency.
    • Drain to Source Voltage (Vdss): 650 V - High voltage rating allows for use in demanding applications.
    • Power Dissipation (Max): 25W (Tc) - Capable of handling significant power dissipation.
    • Rds On (Max): 360mOhm @ 5.5A, 10V - Low on-resistance for efficient power delivery.
    • Vgs(th) (Max): 4V @ 250µA - Ensures reliable threshold voltage performance.
    • Series: MDmesh™ M2 - Part of STMicroelectronics' advanced MOSFET series.
    • Mounting Type: Through Hole - Facilitates easy integration into existing designs.
    • Package: Tube - Provides protection and convenience during handling and storage.

    STF16N65M2 Applications

    The STF16N65M2 is ideal for a variety of applications where high voltage and current handling are required. Some specific use cases include:

    1. Power Supplies: Due to its high voltage and current ratings, the STF16N65M2 is well-suited for power supply designs.
    2. Motor Controls: The low on-resistance and high current capability make it an excellent choice for motor control applications.
    3. Industrial Automation: Its robust performance and reliability make it suitable for use in industrial automation systems.
    4. Automotive Electronics: The STF16N65M2 can be used in various automotive electronic systems, such as power windows and lighting.

    Conclusion of STF16N65M2

    The STF16N65M2 from STMicroelectronics is a powerful MOSFET that offers a combination of high voltage and current handling capabilities, low on-resistance, and excellent switching performance. Its unique features, such as low gate charge and input capacitance, make it an ideal choice for applications requiring high efficiency and reliability. With its robust design and compliance with industry standards, the STF16N65M2 is a reliable solution for a wide range of electronic applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STF16N65M2 Documents

    Download datasheets and manufacturer documentation for STF16N65M2

    Ersa Mult Dev Wafer Site Add 3/Aug/2018      
    Ersa STF16N65M2      
    Ersa STF16N65M2      

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