STMicroelectronics_STF7NM60N

STMicroelectronics
STF7NM60N  
Single FETs, MOSFETs

STMicroelectronics
STF7NM60N
278-STF7NM60N
Ersa
STMicroelectronics-STF7NM60N-datasheets-1016311.pdf
MOSFET N-CH 600V 5A TO220FP
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STF7NM60N Description

STF7NM60N Description

The STF7NM60N is a high-performance MOSFET N-CH 600V 5A TO220FP device manufactured by STMicroelectronics. This single FET is designed to deliver exceptional performance in a variety of applications, thanks to its advanced MOSFET (Metal Oxide) technology. With a maximum drain to source voltage of 600V and a continuous drain current of 5A at 25°C, the STF7NM60N is well-suited for demanding electronic systems.

STF7NM60N Features

  • High Voltage and Current Ratings: The STF7NM60N boasts a drain to source voltage (Vdss) of 600V and a continuous drain current (Id) of 5A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: The device features a maximum Rds(on) of 900mOhm at 2.5A and 10V, ensuring efficient power dissipation and reduced power losses.
  • Robust Gate Drive: With a maximum gate charge (Qg) of 14nC at 10V and a threshold voltage (Vgs(th)) of 4V at 250µA, the STF7NM60N provides reliable and efficient gate control.
  • Thermal Performance: The device can dissipate up to 20W of power at the case temperature (Tc) and operates within a junction temperature range of -55°C to 150°C (TJ).
  • Environmental Compliance: The STF7NM60N is compliant with RoHS3 and is unaffected by REACH regulations, making it suitable for environmentally conscious designs.
  • Package and Mounting: The device is available in a through-hole TO220FP package, providing a robust and reliable mounting solution for various applications.

STF7NM60N Applications

The STF7NM60N is an ideal choice for a wide range of applications where high voltage and current ratings are required. Some specific use cases include:

  • Power Supplies: The device's high voltage and current ratings make it suitable for power supply designs, particularly in applications requiring efficient power conversion and distribution.
  • Motor Controls: The low on-resistance and robust gate drive of the STF7NM60N make it an excellent choice for motor control applications, where precise control and efficient power dissipation are critical.
  • Industrial Automation: The device's ability to handle high voltages and currents, along with its thermal performance, make it well-suited for industrial automation systems that require reliable and efficient operation in demanding environments.

Conclusion of STF7NM60N

The STF7NM60N from STMicroelectronics is a powerful and versatile MOSFET N-CH 600V 5A TO220FP device that offers exceptional performance and reliability in a wide range of applications. Its high voltage and current ratings, low on-resistance, and robust gate drive make it an ideal choice for power supplies, motor controls, and industrial automation systems. With its environmental compliance and robust packaging, the STF7NM60N is a reliable and efficient solution for demanding electronic designs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF7NM60N Documents

Download datasheets and manufacturer documentation for STF7NM60N

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