STMicroelectronics_STP6NK90ZFP

STMicroelectronics
STP6NK90ZFP  
Single FETs, MOSFETs

STMicroelectronics
STP6NK90ZFP
278-STP6NK90ZFP
MOSFET N-CH 900V 5.8A TO220FP
In Stock : 1260

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    STP6NK90ZFP Description

    STP6NK90ZFP is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of power electronics applications, including motor control, power supplies, and automotive systems.

    Description:

    The STP6NK90ZFP is an N-channel enhancement mode MOSFET with a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 90A. It is available in a PowerPAK SO-8 package, which is designed for high-power applications.

    Features:

    1. High-power capability: The STP6NK90ZFP is designed to handle high power levels, making it suitable for use in demanding applications.
    2. Low on-state resistance (RDS(on)): The MOSFET has a low on-state resistance, which helps to minimize power dissipation and improve efficiency.
    3. High switching speed: The STP6NK90ZFP has a fast switching speed, which makes it suitable for use in high-frequency applications.
    4. Robust protection features: The device includes built-in protection features such as over-temperature protection and over-current protection to help ensure reliable operation.
    5. Low gate charge: The MOSFET has a low gate charge, which helps to minimize switching losses and improve overall efficiency.

    Applications:

    1. Motor control: The STP6NK90ZFP can be used in motor control applications, such as in industrial machinery and robotics.
    2. Power supplies: The MOSFET can be used in power supply applications, such as in switching power supplies and battery chargers.
    3. Automotive systems: The STP6NK90ZFP can be used in various automotive systems, such as in electric power steering and braking systems.
    4. Renewable energy systems: The MOSFET can be used in renewable energy systems, such as in solar panel inverters and wind turbine converters.
    5. Industrial control systems: The device can be used in industrial control systems, such as in programmable logic controllers (PLCs) and motor drives.

    In summary, the STP6NK90ZFP is a high-power MOSFET that offers a combination of high-power capability, low on-state resistance, and fast switching speed. It is suitable for use in a variety of power electronics applications, including motor control, power supplies, automotive systems, renewable energy systems, and industrial control systems.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    Typical Drain Source Resistance @ 25°C (mOhm)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Typical Gate Plateau Voltage (V)
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Series
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STP6NK90ZFP Documents

    Download datasheets and manufacturer documentation for STP6NK90ZFP

    Ersa ST(B,P,W)6NK90Z, STP6NK90ZFP      
    Ersa STP6NK90ZFP View All Specifications      
    Ersa ST(B,P,W)6NK90Z, STP6NK90ZFP      

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