STMicroelectronics_SCT070HU120G3AG

STMicroelectronics
SCT070HU120G3AG  
Single FETs, MOSFETs

STMicroelectronics
SCT070HU120G3AG
278-SCT070HU120G3AG
Ersa
STMicroelectronics-SCT070HU120G3AG-datasheets-4805190.pdf
HU3PAK
In Stock : 100

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SCT070HU120G3AG Description

SCT070HU120G3AG Description

The SCT070HU120G3AG is a high-performance Silicon Carbide (SiC) MOSFET from STMicroelectronics, designed for automotive applications. It offers superior performance and reliability, making it ideal for use in demanding environments.

SCT070HU120G3AG Features

  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
  • Grade: Automotive
  • Mounting Type: Surface Mount
  • Product Status: Active
  • Rds On (Max) @ Id, Vgs: 87 mOhm @ 15A, 18V
  • Vgs(th) (Max) @ Id: 4.2V @ 1mA
  • Supplier Device Package: HU3PAK
  • Drain to Source Voltage (Vdss): 1200 V
  • Power Dissipation (Max): 223W (Tc)
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • REACH Status: REACH Unaffected
  • Mfr: STMicroelectronics
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Package: Tape & Reel (TR)
  • RoHS Status: ROHS3 Compliant

SCT070HU120G3AG Applications

The SCT070HU120G3AG's unique features and advantages make it ideal for a variety of high-performance applications, including:

  1. Automotive: Due to its automotive grade and high power dissipation, it is perfect for use in electric and hybrid vehicles, particularly in powertrain and battery management systems.
  2. Industrial: Its high voltage and current ratings make it suitable for use in industrial power supplies and motor control applications.
  3. Renewable Energy: The SCT070HU120G3AG can be used in solar inverters and wind turbine power conversion systems, where high efficiency and reliability are critical.

Conclusion of SCT070HU120G3AG

The SCT070HU120G3AG is a high-performance SiC MOSFET from STMicroelectronics, offering superior performance and reliability for demanding automotive and industrial applications. Its unique features, such as low Rds On, high Vdss, and automotive grade, make it an ideal choice for high-power, high-voltage applications where performance and reliability are critical.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Material
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Operating Junction Temperature (°C)
Tab
Part Status
Package Width
Pd - Power Dissipation
ECCN (EU)
RoHs compliant

SCT070HU120G3AG Documents

Download datasheets and manufacturer documentation for SCT070HU120G3AG

Shopping Guide

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