STMicroelectronics

STB35N60DM2  

Single FETs, MOSFETs

STB35N60DM2 Description

The STB35N60DM2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power management and efficient switching. With a drain-to-source voltage of 600V and a continuous drain current of 28A at 25°C, this device is ideal for high-voltage, high-current applications. The STB35N60DM2 is manufactured using advanced MOSFET technology, ensuring superior performance and reliability.

STB35N60DM2 Features

• 600V Drain-to-Source Voltage (Vdss): Capable of handling high-voltage applications with ease.
• 28A Continuous Drain Current (Id) @ 25°C: Delivers robust current handling capabilities.
• 110mOhm Rds On (Max) @ 14A, 10V: Offers low on-resistance for efficient power dissipation.
• 5V Vgs(th) (Max) @ 250µA: Provides a low threshold voltage for easy gate drive.
• 2400 pF Input Capacitance (Ciss) (Max) @ 100 V: Minimizes input capacitance for faster switching.
• 54 nC Gate Charge (Qg) (Max) @ 10 V: Reduces switching losses and improves efficiency.
• Surface Mount Technology: Facilitates easy integration into compact designs.
• REACH Unaffected and RoHS3 Compliant: Ensures environmental and regulatory compliance.
• Moisture Sensitivity Level (MSL) 1: Suitable for a wide range of manufacturing environments.

STB35N60DM2 Applications

The STB35N60DM2 is ideal for a variety of high-voltage, high-current applications, including:

• Power Supplies: Its high voltage and current ratings make it suitable for power supply designs.
• Motor Controls: The device's low Rds On and high current capabilities are ideal for motor control applications.
• Industrial Automation: Reliable operation in harsh industrial environments due to its robust construction and high voltage ratings.
• Automotive Electronics: Capable of withstanding the high voltages and currents found in automotive systems.

Conclusion of STB35N60DM2

The STB35N60DM2 from STMicroelectronics is a powerful, high-voltage N-Channel MOSFET that offers superior performance and reliability for demanding applications. Its unique combination of high voltage and current ratings, low on-resistance, and advanced MOSFET technology make it an excellent choice for power supplies, motor controls, industrial automation, and automotive electronics. With its REACH unaffected status and RoHS3 compliance, the STB35N60DM2 is not only a high-performance device but also an environmentally responsible choice.

STB35N60DM2 Documents

Download datasheets and manufacturer documentation for STB35N60DM2

Datasheets :

STB35N60DM2      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021      

HTML Datasheet :

STB35N60DM2