STMicroelectronics

STD45N10F7  

Single FETs, MOSFETs

STD45N10F7 Description

The STD45N10F7 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high power and efficiency. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 45A at 25°C, this device is ideal for demanding power electronics applications. The STD45N10F7 features a DeepGATE™ and STripFET™ VII series technology, providing superior performance and reliability.

STD45N10F7 Features

• High Power Handling: The STD45N10F7 can handle a maximum power dissipation of 60W (Tc), making it suitable for high-power applications.
• Low On-Resistance: With a maximum Rds(on) of 18mOhm at 22.5A and 10V, this MOSFET offers low conduction losses, improving efficiency in power conversion applications.
• Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±20V, ensuring reliable operation even under high-voltage transients.
• Low Gate Charge: A maximum gate charge (Qg) of 25nC at 10V reduces switching losses, contributing to higher efficiency in high-frequency applications.
• Surface Mount Package: The DPAK package allows for easy integration into surface-mount applications, improving manufacturing throughput and reliability.
• Compliance: The STD45N10F7 is compliant with RoHS3 and REACH regulations, ensuring environmental and health safety.

STD45N10F7 Applications

The STD45N10F7 is ideal for a wide range of power electronics applications, including:

• Power Supplies: Due to its high voltage and current ratings, the STD45N10F7 is suitable for power supply designs, such as SMPS and chargers.
• Industrial Controls: The device's robustness makes it suitable for motor drives and industrial control systems, where high power and reliability are critical.
• Automotive Electronics: The STD45N10F7 can be used in automotive applications, such as electric power steering and battery management systems, where high efficiency and reliability are essential.
• Renewable Energy: This MOSFET is well-suited for solar inverters and wind energy systems, where high power handling and efficiency are required.

Conclusion of STD45N10F7

The STD45N10F7 is a powerful and efficient N-Channel MOSFET, offering a combination of high voltage, low on-resistance, and robust gate drive capabilities. Its unique features, such as low gate charge and compliance with environmental regulations, make it an excellent choice for high-power applications in various industries. With its superior performance and reliability, the STD45N10F7 stands out as a top choice for demanding power electronics designs.

STD45N10F7 Documents

Download datasheets and manufacturer documentation for STD45N10F7

PCN :

Product Change Notification (PDF)