STMicroelectronics_STL8P4LLF6

STMicroelectronics
STL8P4LLF6  
Single FETs, MOSFETs

STMicroelectronics
STL8P4LLF6
278-STL8P4LLF6
Ersa
STMicroelectronics-STL8P4LLF6-datasheets-140597.pdf
MOSFET P-CH 40V POWERFLAT
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STL8P4LLF6 Description

STL8P4LLF6 Description

The STL8P4LLF6 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for single FET applications. This P-Channel PowerFLAT device offers superior technical specifications and performance benefits, making it an ideal choice for various applications in the electronics industry.

STL8P4LLF6 Features

  • Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
  • Product Status: Active
  • Supplier Device Package: PowerFlat™ (3.3x3.3)
  • Drain to Source Voltage (Vdss): 40 V
  • Power Dissipation (Max): 2.9W (Ta)
  • Technology: MOSFET (Metal Oxide)
  • REACH Status: REACH Unaffected
  • Manufacturer: STMicroelectronics
  • Vgs (Max): ±20V
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Operating Temperature: 150°C (TJ)
  • ECCN: EAR99
  • Mounting Type: Surface Mount
  • Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Series: STripFET™ F6
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • HTSUS: 8541.29.0095
  • Package: Tape & Reel (TR)
  • Base Product Number: STL8

STL8P4LLF6 Applications

The STL8P4LLF6 is ideal for applications that require high performance and reliability in power management and control. Some specific use cases include:

  1. Power Management: The device's high drain-to-source voltage and low Rds On make it suitable for power management applications, such as voltage regulation and current limiting.
  2. Motor Control: The P-Channel MOSFET is ideal for motor control applications, where precise control of motor speed and direction is required.
  3. Automotive Applications: The device's high operating temperature and robust performance make it suitable for automotive applications, such as engine management systems and powertrain control.
  4. Industrial Control: The STL8P4LLF6 can be used in industrial control applications, such as motor drives and power distribution systems.

Conclusion of STL8P4LLF6

The STL8P4LLF6 is a high-performance MOSFET from STMicroelectronics, offering superior technical specifications and performance benefits. Its unique features, such as low Rds On, high drain-to-source voltage, and robust operating temperature, make it an ideal choice for various applications in the electronics industry, including power management, motor control, automotive, and industrial control. With its active product status and compliance with RoHS3 and REACH regulations, the STL8P4LLF6 is a reliable and environmentally friendly solution for your power management and control needs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
Product
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL8P4LLF6 Documents

Download datasheets and manufacturer documentation for STL8P4LLF6

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