The STP15N80K5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. This device is part of the SuperMESH5™ series, known for its superior performance and reliability. With a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 14A at 25°C, the STP15N80K5 is ideal for demanding power electronics applications.
STP15N80K5 Features
High Voltage and Current Handling: The STP15N80K5 can handle a maximum drain-to-source voltage of 800V and a continuous drain current of 14A at 25°C, making it suitable for high-power applications.
Low On-Resistance: The device features a maximum on-resistance (Rds On) of 375mOhm at a drain current of 7A and a gate-source voltage of 10V, ensuring efficient power dissipation.
Robust Gate Drive: With a maximum gate-source voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 5V at 100µA, the STP15N80K5 offers reliable gate control and operation.
Low Input Capacitance: The device has a maximum input capacitance (Ciss) of 1100 pF at 100V, contributing to faster switching speeds and reduced power loss.
Low Gate Charge: The maximum gate charge (Qg) is 32 nC at 10V, minimizing the energy required for gate charging and discharging, leading to improved efficiency.
Environmental Compliance: The STP15N80K5 is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance.
STP15N80K5 Applications
The STP15N80K5 is ideal for a wide range of high-voltage and high-current applications, including:
Power Supplies: Due to its high voltage and current ratings, the STP15N80K5 is suitable for use in power supply designs, particularly in switch-mode power supplies (SMPS) and power factor correction (PFC) circuits.
Industrial Control: The device's robust performance makes it suitable for motor control and industrial automation applications, where high voltage and current handling are required.
Renewable Energy: The STP15N80K5 can be used in solar inverters and wind energy conversion systems, where high voltage and current ratings are essential for efficient energy conversion and management.
Conclusion of STP15N80K5
The STP15N80K5 from STMicroelectronics is a high-performance N-Channel MOSFET that offers superior voltage and current handling capabilities, making it an excellent choice for demanding power electronics applications. Its low on-resistance, robust gate drive, and low input capacitance contribute to improved efficiency and performance. With its environmental compliance and wide range of applications, the STP15N80K5 is a reliable and versatile solution for high-power electronics design.
Tech Specifications
Configuration
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STP15N80K5 Documents
Download datasheets and manufacturer documentation for STP15N80K5
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Shipping Rate
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