STMicroelectronics_STP15N80K5

STMicroelectronics
STP15N80K5  
Single FETs, MOSFETs

STMicroelectronics
STP15N80K5
278-STP15N80K5
Ersa
STMicroelectronics-STP15N80K5-datasheets-3257675.pdf
MOSFET N-CH 800V 14A TO220
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    STP15N80K5 Description

    STP15N80K5 Description

    The STP15N80K5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. This device is part of the SuperMESH5™ series, known for its superior performance and reliability. With a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 14A at 25°C, the STP15N80K5 is ideal for demanding power electronics applications.

    STP15N80K5 Features

    • High Voltage and Current Handling: The STP15N80K5 can handle a maximum drain-to-source voltage of 800V and a continuous drain current of 14A at 25°C, making it suitable for high-power applications.
    • Low On-Resistance: The device features a maximum on-resistance (Rds On) of 375mOhm at a drain current of 7A and a gate-source voltage of 10V, ensuring efficient power dissipation.
    • Robust Gate Drive: With a maximum gate-source voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 5V at 100µA, the STP15N80K5 offers reliable gate control and operation.
    • Low Input Capacitance: The device has a maximum input capacitance (Ciss) of 1100 pF at 100V, contributing to faster switching speeds and reduced power loss.
    • Low Gate Charge: The maximum gate charge (Qg) is 32 nC at 10V, minimizing the energy required for gate charging and discharging, leading to improved efficiency.
    • Environmental Compliance: The STP15N80K5 is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance.

    STP15N80K5 Applications

    The STP15N80K5 is ideal for a wide range of high-voltage and high-current applications, including:

    • Power Supplies: Due to its high voltage and current ratings, the STP15N80K5 is suitable for use in power supply designs, particularly in switch-mode power supplies (SMPS) and power factor correction (PFC) circuits.
    • Industrial Control: The device's robust performance makes it suitable for motor control and industrial automation applications, where high voltage and current handling are required.
    • Renewable Energy: The STP15N80K5 can be used in solar inverters and wind energy conversion systems, where high voltage and current ratings are essential for efficient energy conversion and management.

    Conclusion of STP15N80K5

    The STP15N80K5 from STMicroelectronics is a high-performance N-Channel MOSFET that offers superior voltage and current handling capabilities, making it an excellent choice for demanding power electronics applications. Its low on-resistance, robust gate drive, and low input capacitance contribute to improved efficiency and performance. With its environmental compliance and wide range of applications, the STP15N80K5 is a reliable and versatile solution for high-power electronics design.

    Tech Specifications

    Configuration
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STP15N80K5 Documents

    Download datasheets and manufacturer documentation for STP15N80K5

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