STMicroelectronics_STP24N60M2

STMicroelectronics
STP24N60M2  
Single FETs, MOSFETs

STMicroelectronics
STP24N60M2
278-STP24N60M2
Ersa
STMicroelectronics-STP24N60M2-datasheets-3957254.pdf
MOSFET N-CH 600V 18A TO220
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    STP24N60M2 Description

    STP24N60M2 Description

    The STP24N60M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 18A at 25°C, this device is well-suited for demanding power management and motor control applications. The STP24N60M2 features a low on-resistance (Rds On) of 190mOhm at 9A and 10V, ensuring efficient power dissipation and minimal power loss.

    STP24N60M2 Features

    • High Voltage and Current Handling: The STP24N60M2 can handle a drain-to-source voltage of up to 600V and a continuous drain current of 18A at 25°C, making it ideal for high-power applications.
    • Low On-Resistance: With an on-resistance (Rds On) of just 190mOhm at 9A and 10V, this MOSFET minimizes power loss and ensures efficient power dissipation.
    • Robust Gate Drive: The STP24N60M2 has a maximum gate-source voltage (Vgs) of ±25V, allowing for robust gate drive and improved control over the device.
    • Low Gate Charge: The maximum gate charge (Qg) of 29nC at 10V reduces switching losses and improves overall efficiency.
    • Reliable Operation: The device is rated for a maximum power dissipation of 150W at the case temperature (Tc) and has a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before baking is required.
    • Compliance and Certifications: The STP24N60M2 is compliant with the RoHS3 directive and is classified as EAR99 for export control purposes.

    STP24N60M2 Applications

    The STP24N60M2 is ideal for a wide range of applications where high voltage and current handling are required, including:

    • Power Management: In power supply designs, the STP24N60M2 can be used as a high-side or low-side switch to control the flow of current in the circuit.
    • Motor Control: The device's high voltage and current ratings make it suitable for use in motor control applications, such as electric vehicles, industrial automation, and robotics.
    • Industrial Automation: The STP24N60M2 can be used in various industrial automation systems, such as conveyor belts, robotic arms, and automated assembly lines, where high power and reliability are critical.
    • Renewable Energy: In solar power inverters and wind turbine controllers, the STP24N60M2 can help manage the high voltage and current requirements of these systems.

    Conclusion of STP24N60M2

    The STP24N60M2 is a powerful and reliable N-Channel MOSFET from STMicroelectronics, offering high voltage and current handling capabilities with low on-resistance and robust gate drive. Its unique features, such as low gate charge and compliance with industry standards, make it an ideal choice for demanding power management and motor control applications. With its wide range of applications, the STP24N60M2 is a versatile and efficient solution for engineers designing high-performance electronic systems.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STP24N60M2 Documents

    Download datasheets and manufacturer documentation for STP24N60M2

    Ersa STx24N60M2      
    Ersa STP24N60M2 View All Specifications      
    Ersa STx24N60M2      

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