STMicroelectronics_STP24N60M2
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STMicroelectronics
STP24N60M2

278-STP24N60M2
PDF Datasheet
600V 18A N-CH MOSFET TO-220 168mR Rds(on)
16 Weeks

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Tech Specifications

Package / Case
TO-220
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
168mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
190MR
Fall Time
61ns
Gate to Source Voltage (Vgs)
25V
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STP24N60M2 Description

STP24N60M2 Description

The STP24N60M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 18A at 25°C, this device is well-suited for demanding power management and motor control applications. The STP24N60M2 features a low on-resistance (Rds On) of 190mOhm at 9A and 10V, ensuring efficient power dissipation and minimal power loss.

STP24N60M2 Features

  • High Voltage and Current Handling: The STP24N60M2 can handle a drain-to-source voltage of up to 600V and a continuous drain current of 18A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With an on-resistance (Rds On) of just 190mOhm at 9A and 10V, this MOSFET minimizes power loss and ensures efficient power dissipation.
  • Robust Gate Drive: The STP24N60M2 has a maximum gate-source voltage (Vgs) of ±25V, allowing for robust gate drive and improved control over the device.
  • Low Gate Charge: The maximum gate charge (Qg) of 29nC at 10V reduces switching losses and improves overall efficiency.
  • Reliable Operation: The device is rated for a maximum power dissipation of 150W at the case temperature (Tc) and has a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before baking is required.
  • Compliance and Certifications: The STP24N60M2 is compliant with the RoHS3 directive and is classified as EAR99 for export control purposes.

STP24N60M2 Applications

The STP24N60M2 is ideal for a wide range of applications where high voltage and current handling are required, including:

  • Power Management: In power supply designs, the STP24N60M2 can be used as a high-side or low-side switch to control the flow of current in the circuit.
  • Motor Control: The device's high voltage and current ratings make it suitable for use in motor control applications, such as electric vehicles, industrial automation, and robotics.
  • Industrial Automation: The STP24N60M2 can be used in various industrial automation systems, such as conveyor belts, robotic arms, and automated assembly lines, where high power and reliability are critical.
  • Renewable Energy: In solar power inverters and wind turbine controllers, the STP24N60M2 can help manage the high voltage and current requirements of these systems.

Conclusion of STP24N60M2

The STP24N60M2 is a powerful and reliable N-Channel MOSFET from STMicroelectronics, offering high voltage and current handling capabilities with low on-resistance and robust gate drive. Its unique features, such as low gate charge and compliance with industry standards, make it an ideal choice for demanding power management and motor control applications. With its wide range of applications, the STP24N60M2 is a versatile and efficient solution for engineers designing high-performance electronic systems.

FAQ

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Availability (In Stock : 234 )
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10+ $1.18280 $11.83
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100+ $0.92000 $92.00
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