The STB32NM50N is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for a range of applications requiring efficient power management and control. This N-channel device features a drain-to-source voltage (Vdss) of 500V, making it suitable for high-voltage applications. With a continuous drain current (Id) of 22A at 25°C, the STB32NM50N can handle significant power loads while maintaining low on-resistance (Rds On) of 130mOhm at 11A and 10V.
STB32NM50N Features
High Voltage Tolerance: The STB32NM50N can withstand drain-to-source voltages up to 500V, making it ideal for applications requiring high-voltage switching and protection.
Low On-Resistance: With a maximum Rds On of 130mOhm at 11A and 10V, the STB32NM50N minimizes power dissipation and heat generation, improving efficiency in power management systems.
Robust Current Handling: Capable of handling continuous drain currents up to 22A at 25°C, this MOSFET is well-suited for applications demanding high current capacity.
Low Gate Charge: The maximum gate charge (Qg) of 62.5 nC at 10V contributes to faster switching speeds and reduced power consumption in the gate drive circuit.
Environmental Compliance: The STB32NM50N is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory adherence.
STB32NM50N Applications
Automotive Electronics: The STB32NM50N's high voltage and current ratings make it suitable for automotive applications such as electric power steering, battery management systems, and inverter circuits.
Industrial Control: In industrial settings, this MOSFET can be used in motor drives, power supplies, and other high-voltage control systems.
Power Supplies: The STB32NM50N's ability to handle high voltage and current makes it an excellent choice for power supply designs, particularly in applications requiring high efficiency and reliability.
Renewable Energy: This MOSFET can be utilized in solar inverters and wind turbine power conversion systems, where high voltage and current handling are critical.
Conclusion of STB32NM50N
The STB32NM50N from STMicroelectronics is a versatile and high-performance MOSFET designed for demanding applications requiring high voltage and current handling. Its low on-resistance, robust current capacity, and compliance with environmental regulations make it an excellent choice for a wide range of applications in automotive, industrial control, power supplies, and renewable energy sectors. With its advanced features and performance benefits, the STB32NM50N stands out as a reliable and efficient solution in the electronics industry.
Tech Specifications
Unit Weight
Configuration
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Channel Mode
Product Status
Fall Time
RoHS
Drain to Source Voltage (Vdss)
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Rise Time
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
FET Type
Supplier Device Package
Qg - Gate Charge
Power Dissipation (Max)
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Pd - Power Dissipation
Base Product Number
Supplier Package
ECCN (US)
Grade
ECCN (EU)
RoHs compliant
STB32NM50N Documents
Download datasheets and manufacturer documentation for STB32NM50N
Product Change Notification 2024-03-05 (PDF) D2PAK Leads (Pins) Modification (PDF) MDmesh II Technology, Power MOSFET Transistors, 8" Wafer size Front-end Capacity Extension - Ang Mo Kio (Singapore) (PDF) Product / Process Change Notification (PDF) Product Change Notification (PDF)
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