STMicroelectronics_STW69N65M5

STMicroelectronics
STW69N65M5  
Single FETs, MOSFETs

STMicroelectronics
STW69N65M5
278-STW69N65M5
Ersa
STMicroelectronics-STW69N65M5-datasheets-1443921.pdf
MOSFET N-CH 650V 58A TO247
In Stock : 724

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STW69N65M5 Description

STW69N65M5 Description

The STW69N65M5 is a high-performance N-channel MOSFET designed and manufactured by STMicroelectronics. This device is part of the MDmesh™ V series and is offered in a TO247 package. With its robust technical specifications, the STW69N65M5 is an ideal choice for demanding applications that require high power dissipation and efficient performance.

STW69N65M5 Features

  • Technology: MOSFET (Metal Oxide) - Ensures high efficiency and low power loss.
  • Drain to Source Voltage (Vdss): 650V - Capable of withstanding high voltages in various applications.
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc) - Delivers substantial current for high-power applications.
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 29A, 10V - Offers low on-resistance for efficient power management.
  • Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V - Minimizes switching losses and improves efficiency.
  • Input Capacitance (Ciss) (Max) @ Vds: 6420 pF @ 100 V - Facilitates faster switching speeds.
  • Operating Temperature: 150°C (TJ) - Suitable for high-temperature environments.
  • Mounting Type: Through Hole - Provides a secure and reliable connection in various circuit designs.
  • Power Dissipation (Max): 330W (Tc) - Capable of handling high power dissipation in demanding applications.

STW69N65M5 Applications

The STW69N65M5 is ideal for a variety of applications where high power, efficiency, and reliability are paramount. Some specific use cases include:

  1. Industrial Automation: Due to its high power dissipation and robust design, the STW69N65M5 is well-suited for motor control and power conversion in industrial settings.
  2. Automotive Electronics: The device's ability to handle high voltages and currents makes it an excellent choice for automotive applications, such as electric vehicle charging systems and power management.
  3. Power Supplies: The STW69N65M5's low on-resistance and high current capabilities make it ideal for use in power supply designs, where efficiency and reliability are critical.

Conclusion of STW69N65M5

The STW69N65M5 from STMicroelectronics is a high-performance N-channel MOSFET that offers a combination of high power dissipation, low on-resistance, and robust design. Its unique features and advantages make it an ideal choice for a wide range of applications, including industrial automation, automotive electronics, and power supplies. With its technical specifications and performance benefits, the STW69N65M5 stands out as a reliable and efficient solution in the electronics industry.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW69N65M5 Documents

Download datasheets and manufacturer documentation for STW69N65M5

Ersa IPG-PWR/14/8674 02/Sep/2014      
Ersa ST(F)W69N65M5      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW69N65M5 View All Specifications      
Ersa ST(F)W69N65M5      

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