STMicroelectronics_STP57N65M5

STMicroelectronics
STP57N65M5  
Single FETs, MOSFETs

STMicroelectronics
STP57N65M5
278-STP57N65M5
Ersa
STMicroelectronics-STP57N65M5-datasheets-8651637.pdf
MOSFET N-CH 650V 42A TO220
In Stock : 225

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STP57N65M5 Description

STP57N65M5 Description

The STP57N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. This device features a robust 650V drain-to-source voltage rating and can handle continuous drain currents up to 42A at 25°C. With a maximum power dissipation of 250W, the STP57N65M5 is well-suited for demanding power electronic applications.

STP57N65M5 Features

  • High Voltage and Current Ratings: The STP57N65M5 boasts a 650V drain-to-source voltage rating and can handle continuous drain currents up to 42A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum on-resistance (Rds(on)) of 63mΩ at 21A and 10V, the STP57N65M5 offers low conduction losses, improving efficiency in power electronic systems.
  • Fast Switching Speed: The device has a maximum gate threshold voltage (Vgs(th)) of 5V at 250µA, enabling fast switching speeds and reducing switching losses.
  • Robust Gate Charge Handling: The STP57N65M5 can handle a maximum gate charge (Qg) of 98nC at 10V, ensuring reliable operation in high-speed switching applications.
  • Wide Operating Temperature Range: The device is designed to operate over a wide temperature range of -55°C to 150°C, making it suitable for various harsh environments.
  • Compliance with Industry Standards: The STP57N65M5 is compliant with the RoHS3 directive and is unaffected by REACH regulations, ensuring environmental compliance.

STP57N65M5 Applications

The STP57N65M5 is an excellent choice for a variety of high-power electronic applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STP57N65M5 is ideal for use in power supply designs, such as SMPS (Switched-Mode Power Supplies) and linear regulators.
  • Industrial Control Systems: The device's robust performance characteristics make it suitable for use in motor drives, inverters, and other industrial control systems that require high voltage and current handling capabilities.
  • Automotive Applications: The STP57N65M5 can be used in various automotive applications, such as electric vehicle (EV) charging systems, battery management systems, and powertrain control modules.
  • Renewable Energy Systems: The device's high voltage and current ratings make it suitable for use in renewable energy systems, such as solar inverters and wind turbine control systems.

Conclusion of STP57N65M5

The STP57N65M5 is a versatile and high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current ratings, low on-resistance, and fast switching speeds. Its robust performance characteristics, compliance with industry standards, and wide operating temperature range make it an ideal choice for a variety of high-power electronic applications, including power supplies, industrial control systems, automotive applications, and renewable energy systems.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP57N65M5 Documents

Download datasheets and manufacturer documentation for STP57N65M5

Ersa STx57N65M5      
Ersa STP57N65M5 View All Specifications      
Ersa STx57N65M5      
Ersa STx57N65M5 24/Nov/2023      

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