The STW40N65M2 from STMicroelectronics is a high-performance N-channel 650V MOSFET designed for demanding power applications. Part of the MDmesh™ M2 series, it combines low on-resistance (99mΩ @ 16A, 10V) with high current handling (32A continuous drain current @ 25°C) and robust thermal performance (250W max power dissipation @ Tc). Its TO-247 package ensures efficient heat dissipation, making it suitable for high-power designs. The device operates reliably up to 150°C junction temperature and features a low gate charge (56.5nC @ 10V), enabling fast switching and reduced conduction losses.
This MOSFET excels in high-efficiency power systems, including:
The STW40N65M2 stands out for its low conduction losses, high switching speed, and thermal robustness, making it ideal for high-power, high-efficiency designs. Its MDmesh™ M2 technology ensures superior performance compared to standard MOSFETs, particularly in applications requiring high voltage and current handling. With STMicroelectronics' proven reliability, this MOSFET is a top choice for engineers designing advanced power electronics systems.
Download datasheets and manufacturer documentation for STW40N65M2