STMicroelectronics_STW40N65M2

STMicroelectronics
STW40N65M2  
Single FETs, MOSFETs

STMicroelectronics
STW40N65M2
278-STW40N65M2
Ersa
STMicroelectronics-STW40N65M2-datasheets-8372873.pdf
MOSFET N-CH 650V 32A TO247
In Stock : 1330

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STW40N65M2 Description

STW40N65M2 Description

The STW40N65M2 from STMicroelectronics is a high-performance N-channel 650V MOSFET designed for demanding power applications. Part of the MDmesh™ M2 series, it combines low on-resistance (99mΩ @ 16A, 10V) with high current handling (32A continuous drain current @ 25°C) and robust thermal performance (250W max power dissipation @ Tc). Its TO-247 package ensures efficient heat dissipation, making it suitable for high-power designs. The device operates reliably up to 150°C junction temperature and features a low gate charge (56.5nC @ 10V), enabling fast switching and reduced conduction losses.

STW40N65M2 Features

  • High Voltage & Current Rating: 650V Vdss and 32A Id for robust power handling.
  • Low Rds(on): 99mΩ minimizes conduction losses, improving efficiency.
  • Fast Switching: Optimized gate charge (56.5nC) and input capacitance (2355pF) enhance performance in high-frequency applications.
  • Thermal Efficiency: TO-247 package with 250W power dissipation capability ensures stability under heavy loads.
  • Wide Drive Voltage Range: Supports ±25V Vgs, with 10V recommended for optimal Rds(on).
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term durability.

STW40N65M2 Applications

This MOSFET excels in high-efficiency power systems, including:

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
  • Motor Drives & Inverters: Efficient switching in industrial and automotive motor control.
  • Renewable Energy Systems: Solar inverters and wind power converters.
  • UPS & Industrial Power Modules: Reliable performance in backup and high-current applications.

Conclusion of STW40N65M2

The STW40N65M2 stands out for its low conduction losses, high switching speed, and thermal robustness, making it ideal for high-power, high-efficiency designs. Its MDmesh™ M2 technology ensures superior performance compared to standard MOSFETs, particularly in applications requiring high voltage and current handling. With STMicroelectronics' proven reliability, this MOSFET is a top choice for engineers designing advanced power electronics systems.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW40N65M2 Documents

Download datasheets and manufacturer documentation for STW40N65M2

Ersa STW40N65M2      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW40N65M2      

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