STMicroelectronics_STW28N65M2

STMicroelectronics
STW28N65M2  
Single FETs, MOSFETs

STMicroelectronics
STW28N65M2
278-STW28N65M2
Ersa
STMicroelectronics-STW28N65M2-datasheets-7438044.pdf
MOSFET N-CH 650V 20A TO247
In Stock : 669

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STW28N65M2 Description

STW28N65M2 Description

The STW28N65M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 20A at 25°C, this MOSFET is well-suited for demanding power electronics applications.

STW28N65M2 Features

  • High Voltage and Current Ratings: The STW28N65M2 boasts a Vdss of 650V and can handle a continuous Id of 20A, making it ideal for high-power applications.
  • Low On-Resistance: At 180mOhm max at 10A and 10V, the STW28N65M2 offers low Rds(on), reducing power losses and improving efficiency.
  • Robust Gate Charge: With a maximum gate charge (Qg) of 35nC at 10V, this MOSFET ensures fast switching and reduced switching losses.
  • Wide Operating Temperature: Capable of withstanding temperatures up to 150°C (TJ), the STW28N65M2 is suitable for harsh environments.
  • Compliance and Environmental: This MOSFET is REACH unaffected and RoHS3 compliant, adhering to environmental standards.

STW28N65M2 Applications

The STW28N65M2's high voltage and current ratings, along with its low on-resistance, make it an excellent choice for:

  • Power Supplies: Due to its ability to handle high voltages and currents, the STW28N65M2 is ideal for power supply applications where efficiency and reliability are critical.
  • Industrial Automation: In motor control and drives, the STW28N65M2's robust performance ensures reliable operation in industrial settings.
  • Automotive Electronics: The STW28N65M2's high voltage and temperature capabilities make it suitable for automotive applications, such as electric vehicle charging systems and power management.

Conclusion of STW28N65M2

The STW28N65M2 from STMicroelectronics stands out for its high voltage and current ratings, low on-resistance, and compliance with environmental standards. Its performance benefits and unique features make it an ideal choice for power supply, industrial automation, and automotive electronics applications. With its robust design and wide operating temperature range, the STW28N65M2 ensures reliable operation in demanding environments.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW28N65M2 Documents

Download datasheets and manufacturer documentation for STW28N65M2

Ersa STx28N65M2      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STx28N65M2      

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