STMicroelectronics
STB120NF10T4  
Single FETs, MOSFETs

STMicroelectronics
STB120NF10T4
278-STB120NF10T4
MOSFET N-CH 100V 110A D2PAK
In Stock : 1746

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STB120NF10T4 Description

STMicroelectronics' STB120NF10T4 is a high-power, high-voltage N-channel MOSFET transistor designed for use in a wide range of applications. Here is a brief description of the model, its features, and potential applications:

Model: STB120NF10T4

Description:

The STB120NF10T4 is an N-channel enhancement mode field effect transistor (MOSFET) with a high cell density and advanced design that provides excellent electrical performance and thermal efficiency. It is manufactured using ST's proprietary Trench Field-Stop technology, which ensures high reliability and robustness.

Features:

  1. High Voltage Rating: The device is designed to handle high voltages, making it suitable for applications that require high-voltage switching.
  2. High Current Capability: With its high current handling capacity, the STB120NF10T4 can manage significant current loads, making it ideal for power electronics applications.
  3. Low On-State Resistance (RDS(on)): The low on-state resistance of the MOSFET contributes to higher efficiency and lower power dissipation in the switching process.
  4. Fast Switching Speed: The device offers fast switching characteristics, which can be beneficial in applications that require rapid response times.
  5. Robust Design: The Trench Field-Stop technology provides a robust and reliable design, ensuring long-term stability and performance.
  6. Thermal Performance: The MOSFET is designed with thermal management in mind, allowing for efficient heat dissipation and extended device life.

Applications:

  1. Motor Control: The STB120NF10T4 can be used in motor control applications, such as in industrial machinery, robotics, and automotive systems.
  2. Power Supplies: The device is suitable for use in power supply circuits, including switched-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  3. Inverters: The MOSFET can be used in inverter circuits for renewable energy systems, such as solar panel installations and battery inverters.
  4. UPS Systems: The high-voltage and high-current capabilities make it suitable for use in backup power systems that require efficient and reliable switching.
  5. Industrial Automation: The STB120NF10T4 can be used in various industrial automation applications, such as in control systems for manufacturing equipment and conveyor systems.
  6. Electrical Heating: The device can be used in high-power electrical heating applications, such as in industrial furnaces and heaters.

The STB120NF10T4 is a versatile and high-performance MOSFET that can be utilized in a wide range of power electronics applications, providing efficient and reliable switching capabilities.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STB120NF10T4 Documents

Download datasheets and manufacturer documentation for STB120NF10T4

Ersa Mult Dev Assembly Chg 18/Oct/2019      
Ersa STx120NF10      
Ersa Box Label Chg 28/Jul/2016      
Ersa STB100NF04 View All Specifications      
Ersa STx120NF10      
Ersa IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013      

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