STMicroelectronics_STP100N6F7

STMicroelectronics
STP100N6F7  
Single FETs, MOSFETs

STMicroelectronics
STP100N6F7
278-STP100N6F7
Ersa
STMicroelectronics-STP100N6F7-datasheets-4071158.pdf
MOSFET N-CH 60V 100A TO220
In Stock : 3763

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STP100N6F7 Description

STP100N6F7 Description

The STP100N6F7 is a high-performance N-Channel MOSFET from STMicroelectronics, designed to deliver exceptional performance in various power management applications. With a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 100A at 25°C, this device is capable of handling high power loads efficiently. The STP100N6F7 is manufactured using advanced MOSFET technology, ensuring low on-resistance and high efficiency.

STP100N6F7 Features

  • High Power Handling: The STP100N6F7 can handle a maximum power dissipation of 125W at Tc, making it suitable for high-power applications.
  • Low On-Resistance: The device features a maximum Rds(on) of 5.6mΩ at 50A and 10V, ensuring minimal power loss during operation.
  • Robust Voltage Ratings: With a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA, the STP100N6F7 offers robust voltage ratings for reliable operation.
  • High Input Capacitance: The device has a maximum input capacitance (Ciss) of 1980pF at 25V, providing fast switching capabilities.
  • Low Gate Charge: The maximum gate charge (Qg) is 30nC at 10V, contributing to low switching losses.
  • Compliance: The STP100N6F7 is compliant with the RoHS3 directive and is REACH unaffected, ensuring environmental and regulatory compliance.

STP100N6F7 Applications

The STP100N6F7 is ideal for a wide range of applications, including:

  • Power Supplies: Due to its high power handling capabilities, the STP100N6F7 is suitable for use in power supply designs, where high efficiency and low power loss are critical.
  • Motor Control: The device's low on-resistance and high current handling capabilities make it an excellent choice for motor control applications, such as electric vehicles and industrial motor drives.
  • Industrial Automation: The STP100N6F7's robust voltage ratings and high power dissipation make it suitable for use in industrial automation systems, where reliability and performance are essential.

Conclusion of STP100N6F7

The STP100N6F7 from STMicroelectronics is a high-performance N-Channel MOSFET that offers a combination of high power handling, low on-resistance, and robust voltage ratings. Its unique features and advantages make it an ideal choice for a variety of applications, including power supplies, motor control, and industrial automation. With its compliance with environmental and regulatory standards, the STP100N6F7 is a reliable and efficient solution for demanding power management applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP100N6F7 Documents

Download datasheets and manufacturer documentation for STP100N6F7

Ersa STP100N6F7      
Ersa STP100N6F7      

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