STMicroelectronics_STP35N65M5

STMicroelectronics
STP35N65M5  
Single FETs, MOSFETs

STMicroelectronics
STP35N65M5
278-STP35N65M5
Ersa
STMicroelectronics-STP35N65M5-datasheets-8377541.pdf
MOSFET N-CH 650V 27A TO220AB
In Stock : 26417

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STP35N65M5 Description

STP35N65M5 Description

The STP35N65M5 from STMicroelectronics is a high-performance N-channel power MOSFET designed for demanding switching applications. Built using the advanced MDmesh™ V technology, it offers a robust 650V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 27A (Tc). With a low on-resistance (Rds(on)) of 98mΩ @ 13.5A, 10V, this device ensures efficient power handling and minimal conduction losses. Although marked as obsolete, its specifications make it suitable for legacy designs requiring high-voltage, high-current capabilities. The TO-220AB through-hole package provides excellent thermal dissipation, supporting a maximum power dissipation of 160W (Tc) and an operating junction temperature (Tj) of up to 150°C.

STP35N65M5 Features

  • High Voltage & Current Rating: 650V Vdss and 27A Id for robust power switching.
  • Low Rds(on): 98mΩ @ 10V Vgs, reducing conduction losses.
  • MDmesh™ V Technology: Optimized for fast switching and low gate charge (Qg(max) = 83nC @ 10V).
  • Thermal Performance: TO-220AB package with 160W power dissipation capability.
  • Wide Vgs Range: ±25V gate drive tolerance for flexible control.
  • Reliability: RoHS3 compliant, REACH unaffected, and EAR99 classified for global compliance.

STP35N65M5 Applications

The STP35N65M5 excels in high-voltage, high-efficiency applications, including:

  • Switched-Mode Power Supplies (SMPS): PFC stages, DC-DC converters, and inverters.
  • Motor Drives: Industrial and automotive motor control systems.
  • Lighting Solutions: High-power LED drivers and ballasts.
  • Renewable Energy: Solar inverters and wind power converters.
  • Industrial Equipment: Welding machines and UPS systems.

Conclusion of STP35N65M5

The STP35N65M5 is a reliable, high-voltage MOSFET tailored for power electronics requiring efficient switching and thermal performance. While obsolete, its MDmesh™ V technology and robust specifications make it a strong candidate for legacy or specialized designs. Engineers can leverage its low Rds(on), high current capability, and thermal resilience in applications ranging from industrial motor drives to renewable energy systems. For modern alternatives, STMicroelectronics offers newer generations of MDmesh™ devices with enhanced performance.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STP35N65M5 Documents

Download datasheets and manufacturer documentation for STP35N65M5

Ersa STx35N65M5      
Ersa IPD/15/9345 04/Aug/2015      
Ersa STx35N65M5      

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