The STP35N65M5 from STMicroelectronics is a high-performance N-channel power MOSFET designed for demanding switching applications. Built using the advanced MDmesh™ V technology, it offers a robust 650V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 27A (Tc). With a low on-resistance (Rds(on)) of 98mΩ @ 13.5A, 10V, this device ensures efficient power handling and minimal conduction losses. Although marked as obsolete, its specifications make it suitable for legacy designs requiring high-voltage, high-current capabilities. The TO-220AB through-hole package provides excellent thermal dissipation, supporting a maximum power dissipation of 160W (Tc) and an operating junction temperature (Tj) of up to 150°C.
The STP35N65M5 excels in high-voltage, high-efficiency applications, including:
The STP35N65M5 is a reliable, high-voltage MOSFET tailored for power electronics requiring efficient switching and thermal performance. While obsolete, its MDmesh™ V technology and robust specifications make it a strong candidate for legacy or specialized designs. Engineers can leverage its low Rds(on), high current capability, and thermal resilience in applications ranging from industrial motor drives to renewable energy systems. For modern alternatives, STMicroelectronics offers newer generations of MDmesh™ devices with enhanced performance.
Download datasheets and manufacturer documentation for STP35N65M5