The STW28NM50N from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. With a 500V drain-to-source voltage (Vdss) and 21A continuous drain current (Id), it delivers robust power handling in a TO-247-3 package. Built using MDmesh™ II technology, this MOSFET offers superior switching efficiency and thermal performance, making it ideal for high-voltage, high-frequency applications. Its low on-resistance (Rds(on) of 158mΩ @ 10V Vgs) ensures minimal conduction losses, while the ±25V gate-source voltage (Vgs) tolerance provides flexibility in drive circuitry. The device operates reliably up to 150°C junction temperature (TJ) and is RoHS3 compliant, meeting stringent environmental standards.
The STW28NM50N excels in high-efficiency power systems, including:
The STW28NM50N stands out as a high-reliability MOSFET for 500V power applications, combining low Rds(on), fast switching, and excellent thermal performance. Its MDmesh™ II technology ensures efficiency in demanding environments, while its TO-247-3 package provides mechanical robustness. Whether in industrial power systems, renewable energy, or motor control, this MOSFET delivers superior performance and durability, making it a top choice for engineers prioritizing efficiency and reliability.
Download datasheets and manufacturer documentation for STW28NM50N