STMicroelectronics_STW28NM50N

STMicroelectronics
STW28NM50N  
Single FETs, MOSFETs

STMicroelectronics
STW28NM50N
278-STW28NM50N
Ersa
STMicroelectronics-STW28NM50N-datasheets-9533718.pdf
MOSFET N-CH 500V 21A TO247-3
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STW28NM50N Description

STW28NM50N Description

The STW28NM50N from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. With a 500V drain-to-source voltage (Vdss) and 21A continuous drain current (Id), it delivers robust power handling in a TO-247-3 package. Built using MDmesh™ II technology, this MOSFET offers superior switching efficiency and thermal performance, making it ideal for high-voltage, high-frequency applications. Its low on-resistance (Rds(on) of 158mΩ @ 10V Vgs) ensures minimal conduction losses, while the ±25V gate-source voltage (Vgs) tolerance provides flexibility in drive circuitry. The device operates reliably up to 150°C junction temperature (TJ) and is RoHS3 compliant, meeting stringent environmental standards.

STW28NM50N Features

  • High Voltage & Current Rating: 500V Vdss and 21A Id for robust power switching.
  • Low Rds(on): 158mΩ @ 10V Vgs, reducing conduction losses and improving efficiency.
  • Advanced MDmesh™ II Technology: Enhances switching speed and reduces parasitic effects.
  • High Gate Charge (Qg): 50nC @ 10V, optimized for fast switching applications.
  • Wide Vgs Range: ±25V, offering design flexibility.
  • Thermal Performance: 150W power dissipation (Tc) and 150°C TJ for reliable operation in harsh environments.
  • Compliance: ROHS3, REACH unaffected, and ECCN EAR99 for global usability.

STW28NM50N Applications

The STW28NM50N excels in high-efficiency power systems, including:

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
  • Motor Drives & Inverters: Industrial and automotive motor control systems.
  • Renewable Energy Systems: Solar inverters and wind power converters.
  • Inductive Load Switching: Relays, solenoids, and high-current switching circuits.
  • Audio Amplifiers: Class-D amplifier output stages for high-fidelity audio.

Conclusion of STW28NM50N

The STW28NM50N stands out as a high-reliability MOSFET for 500V power applications, combining low Rds(on), fast switching, and excellent thermal performance. Its MDmesh™ II technology ensures efficiency in demanding environments, while its TO-247-3 package provides mechanical robustness. Whether in industrial power systems, renewable energy, or motor control, this MOSFET delivers superior performance and durability, making it a top choice for engineers prioritizing efficiency and reliability.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW28NM50N Documents

Download datasheets and manufacturer documentation for STW28NM50N

Ersa IPG-PWR/14/8674 02/Sep/2014      
Ersa STx28NM50N      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW28NM50N View All Specifications      
Ersa STx28NM50N      

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