STMicroelectronics

SCT10N120  

Single FETs, MOSFETs

SCT10N120 Description

The SCT10N120 from STMicroelectronics is a high-performance SiCFET (Silicon Carbide) N-channel MOSFET designed for demanding power electronics applications. With a 1200V drain-to-source voltage (Vdss) and 12A continuous drain current (Id), this device offers superior efficiency and reliability in high-voltage circuits. Its SiC technology ensures lower conduction losses, higher switching speeds, and better thermal performance compared to traditional silicon-based MOSFETs. Packaged in the HiP247™ through-hole module, the SCT10N120 is optimized for rugged industrial environments, featuring a maximum power dissipation of 150W (Tc) and a low on-resistance (Rds On) of 690mOhm at 6A, 20V.

SCT10N120 Features

• Advanced SiCFET Technology: Delivers higher efficiency, faster switching, and reduced thermal resistance.
• High Voltage Rating: 1200V Vdss makes it ideal for industrial and renewable energy applications.
• Low Gate Charge (Qg): 22 nC @ 20V minimizes switching losses and improves high-frequency performance.
• Robust Thermal Performance: 150W (Tc) power dissipation ensures stability under heavy loads.
• Low Input Capacitance (Ciss): 290 pF @ 400V enhances switching speed and reduces driver requirements.
• Industry-Standard Compliance: ROHS3 Compliant, REACH Unaffected, and MSL 1 (Unlimited) for reliability in harsh conditions.
• Optimized Drive Voltage: 20V gate drive ensures full enhancement with minimal losses.

SCT10N120 Applications

The SCT10N120 excels in high-power, high-frequency applications, including:

• Solar inverters and renewable energy systems, where high voltage and efficiency are critical.
• Industrial motor drives and power supplies, benefiting from its low Rds On and thermal robustness.
• Electric vehicle (EV) charging systems, leveraging fast switching and high voltage tolerance.
• UPS and energy storage systems, where reliability and low losses are paramount.

Conclusion of SCT10N120

The SCT10N120 stands out as a high-efficiency SiC MOSFET for 1200V applications, combining low conduction losses, fast switching, and excellent thermal performance. Its HiP247™ packaging and industrial-grade robustness make it a top choice for engineers designing high-power converters, inverters, and motor drives. With STMicroelectronics' proven SiC technology, this device ensures long-term reliability and performance in demanding environments.

SCT10N120 Documents

Download datasheets and manufacturer documentation for SCT10N120

Datasheets :

Fine Tune SIC MOSFET Gate Driver       SCT10N120      

PCN Packaging :

Standard outer labelling 15/Nov/2023      

HTML Datasheet :

Fine Tune SIC MOSFET Gate Driver