The STB55NF06LT4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high efficiency and low power dissipation. With a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 55A at 25°C, this device is capable of handling high power applications. The STB55NF06LT4 features a low on-resistance (Rds On) of 18mOhm at 27.5A and 10V, contributing to its high efficiency. The device is housed in a D2PAK package, suitable for surface mount applications.
STB55NF06LT4 Features
Low On-Resistance (Rds On): 18mOhm at 27.5A and 10V, ensuring minimal power loss and high efficiency.
High Drain-Source Voltage (Vdss): 60V, suitable for high voltage applications.
Continuous Drain Current (Id): 55A at 25°C, capable of handling high power loads.
Low Gate Charge (Qg): 37nC at 4.5V, reducing switching losses and improving efficiency.
Low Input Capacitance (Ciss): 1700pF at 25V, minimizing capacitive effects and improving high-frequency performance.
Robust Gate Voltage Range: ±16V, providing flexibility in gate drive circuit design.
Compliance with RoHS3 and REACH: Ensuring environmental and safety standards are met.
Low Moisture Sensitivity Level (MSL): MSL 1, allowing for unlimited storage time before reflow soldering.
STB55NF06LT4 Applications
The STB55NF06LT4 is ideal for a variety of high-power applications, including:
Power Supplies: Utilizing its high voltage and current capabilities, this MOSFET is suitable for power supply designs.
Motor Controls: The device's low on-resistance and high current handling make it ideal for motor control applications.
Industrial Automation: Its robustness and high power capabilities make it suitable for industrial automation systems.
Automotive Applications: The STB55NF06LT4 can be used in automotive electronics, such as electric power steering and battery management systems.
Conclusion of STB55NF06LT4
The STB55NF06LT4 from STMicroelectronics is a powerful and efficient N-Channel MOSFET, offering a combination of high voltage and current capabilities, low on-resistance, and compliance with environmental standards. Its unique features make it an excellent choice for high-power applications in power supplies, motor controls, industrial automation, and automotive electronics. With its robust performance and reliability, the STB55NF06LT4 stands out as a superior option in the MOSFET market.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Package Length
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Qualification
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STB55NF06LT4 Documents
Download datasheets and manufacturer documentation for STB55NF06LT4
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