STMicroelectronics_STP7N105K5

STMicroelectronics
STP7N105K5  
Single FETs, MOSFETs

STMicroelectronics
STP7N105K5
278-STP7N105K5
Ersa
STMicroelectronics-STP7N105K5-datasheets-5688804.pdf
MOSFET N-CH 1050V 4A TO220
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STP7N105K5 Description

STP7N105K5 Description

The STP7N105K5 from STMicroelectronics is a high-voltage N-channel MOSFET designed for robust power switching applications. Part of the SuperMESH5™ series, it features a 1050V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 4A (Tc), making it suitable for demanding high-voltage environments. With a low on-resistance (Rds(on)) of 2Ω @ 2A, 10V, it ensures efficient power handling while minimizing conduction losses. The device is housed in a TO-220 package, offering excellent thermal performance and ease of mounting in through-hole designs.

STP7N105K5 Features

  • High Voltage Rating: 1050V Vdss ensures reliability in high-voltage circuits.
  • Low Gate Charge (Qg): 17nC @ 10V reduces switching losses, enhancing efficiency in high-frequency applications.
  • Low Input Capacitance (Ciss): 380pF @ 100V improves switching speed and reduces drive requirements.
  • Robust Thermal Performance: 110W (Tc) power dissipation capability ensures stable operation under high loads.
  • Wide Gate-Source Voltage Range: ±30V Vgs (max) provides flexibility in drive circuitry design.
  • SuperMESH5™ Technology: Delivers superior performance in high-voltage switching with optimized Rds(on) and switching characteristics.
  • Compliance: ROHS3 Compliant and REACH Unaffected, meeting environmental and regulatory standards.

STP7N105K5 Applications

The STP7N105K5 is ideal for applications requiring high-voltage switching and efficient power management, including:

  • Switch-Mode Power Supplies (SMPS): High-voltage input stages and PFC circuits.
  • Industrial Power Systems: Motor drives, inverters, and UPS systems.
  • Lighting Solutions: Ballasts and LED drivers.
  • Renewable Energy: Solar inverters and wind power converters.
  • Automotive Systems: High-voltage DC-DC converters and charging infrastructure.

Conclusion of STP7N105K5

The STP7N105K5 stands out as a high-performance N-channel MOSFET with 1050V breakdown voltage, low conduction losses, and fast switching capabilities. Its SuperMESH5™ technology and TO-220 packaging make it a reliable choice for high-voltage power electronics. Whether in industrial, automotive, or renewable energy applications, this MOSFET delivers efficiency, durability, and compliance with modern environmental standards. Engineers seeking a balance of high-voltage handling and low-loss switching will find the STP7N105K5 an excellent solution.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
Typical Drain Source Resistance @ 25°C (mOhm)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP7N105K5 Documents

Download datasheets and manufacturer documentation for STP7N105K5

Ersa IPD/15/9124 20/Mar/2015      
Ersa STx7N105K5      
Ersa STx7N105K5      

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