The STP7N105K5 from STMicroelectronics is a high-voltage N-channel MOSFET designed for robust power switching applications. Part of the SuperMESH5™ series, it features a 1050V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 4A (Tc), making it suitable for demanding high-voltage environments. With a low on-resistance (Rds(on)) of 2Ω @ 2A, 10V, it ensures efficient power handling while minimizing conduction losses. The device is housed in a TO-220 package, offering excellent thermal performance and ease of mounting in through-hole designs.
The STP7N105K5 is ideal for applications requiring high-voltage switching and efficient power management, including:
The STP7N105K5 stands out as a high-performance N-channel MOSFET with 1050V breakdown voltage, low conduction losses, and fast switching capabilities. Its SuperMESH5™ technology and TO-220 packaging make it a reliable choice for high-voltage power electronics. Whether in industrial, automotive, or renewable energy applications, this MOSFET delivers efficiency, durability, and compliance with modern environmental standards. Engineers seeking a balance of high-voltage handling and low-loss switching will find the STP7N105K5 an excellent solution.
Download datasheets and manufacturer documentation for STP7N105K5