The STW32N65M5 is a high-performance MOSFET N-CH 650V 24A TO247-3 device manufactured by STMicroelectronics. This single FET is designed to deliver exceptional performance in various electronic applications. With a maximum drain-to-source voltage of 650V and a continuous drain current of 24A at 25°C, the STW32N65M5 is well-suited for high-voltage and high-current applications. Its low on-resistance of 119mOhm at 12A and 10V ensures efficient power dissipation, with a maximum power dissipation of 150W at the case temperature.
Vgs (Max): ±25V - Allows for a wide range of gate voltages, increasing design flexibility.
Rds On (Max): 119mOhm @ 12A, 10V - Ensures low on-resistance for efficient power dissipation.
Vgs(th) (Max): 5V @ 250µA - Provides a low threshold voltage for improved performance.
Operating Temperature: 150°C (TJ) - Enables operation in high-temperature environments.
Mounting Type: Through Hole - Facilitates easy integration into various circuit designs.
Package: Tube - Offers protection and ease of handling during manufacturing and assembly.
STW32N65M5 Applications
The STW32N65M5 is ideal for a wide range of applications where high voltage, high current, and low on-resistance are required. Some specific use cases include:
Power Supplies: Due to its high voltage and current ratings, the STW32N65M5 is well-suited for power supply applications, such as switching power supplies and battery chargers.
Industrial Automation: The device's robust performance makes it suitable for motor control and other industrial automation applications where high power and reliability are critical.
Automotive: The STW32N65M5 can be used in automotive applications, such as electric vehicle charging systems and power management, thanks to its high voltage and temperature ratings.
Renewable Energy: In solar inverters and wind turbine power electronics, the STW32N65M5's high voltage and current capabilities make it an excellent choice for efficient energy conversion and management.
Conclusion of STW32N65M5
The STW32N65M5 is a high-performance MOSFET designed for demanding applications requiring high voltage, high current, and low on-resistance. Its unique features, such as low input capacitance, low gate charge, and high operating temperature, make it an ideal choice for power supplies, industrial automation, automotive, and renewable energy applications. While the product is now considered obsolete, its performance benefits and versatility in high-power applications make it a valuable component in legacy systems and designs where high reliability and efficiency are paramount.
Tech Specifications
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
STW32N65M5 Documents
Download datasheets and manufacturer documentation for STW32N65M5
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service