STMicroelectronics_STP270N8F7

STMicroelectronics
STP270N8F7  
Single FETs, MOSFETs

STMicroelectronics
STP270N8F7
278-STP270N8F7
Ersa
STMicroelectronics-STP270N8F7-datasheets-1886739.pdf
MOSFET N CH 80V 180A TO220
In Stock : 937

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STP270N8F7 Description

STP270N8F7 Description

The STP270N8F7 is a high-performance N-channel MOSFET from STMicroelectronics, designed for demanding power electronics applications. It features a robust TO-220 package, making it ideal for a wide range of applications. With a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of 180A at 25°C, the STP270N8F7 delivers exceptional performance in high-power applications.

STP270N8F7 Features

  • Technology: MOSFET (Metal Oxide) - offering high efficiency and low power loss.
  • DeepGATE™, STripFET™ VII Series: Advanced series for improved performance and reliability.
  • Input Capacitance (Ciss): 13.6nF max @ 50V, ensuring fast switching and reduced noise.
  • Gate Charge (Qg): 193nC max @ 10V, enabling rapid gate charging and discharging.
  • Rds On (Max): 2.5mOhm @ 90A, 10V, providing low on-resistance for efficient power delivery.
  • Vgs(th) (Max): 4V @ 250µA, ensuring reliable threshold voltage performance.
  • Power Dissipation (Max): 315W (Tc), suitable for high-power applications.
  • Mounting Type: Through Hole, providing secure and reliable mechanical connection.
  • Package: Tube, offering protection and ease of handling during assembly.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.
  • RoHS Status: ROHS3 Compliant, adhering to environmental regulations.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), allowing for flexible storage and handling.

STP270N8F7 Applications

The STP270N8F7 is ideal for applications requiring high power and robust performance, such as:

  1. Power Supplies: Utilizing its high voltage and current capabilities for efficient power conversion.
  2. Motor Controls: Providing precise control and high power delivery for electric motor applications.
  3. Industrial Automation: Ensuring reliable operation in demanding industrial environments.
  4. Automotive Electronics: Supporting high-power requirements in automotive systems, such as electric power steering and battery management.

Conclusion of STP270N8F7

The STP270N8F7 from STMicroelectronics is a powerful and reliable N-channel MOSFET, designed to meet the demands of high-power applications. Its advanced technology, robust package, and compliance with industry standards make it an excellent choice for power electronics designers. With its unique features and advantages, the STP270N8F7 stands out as a top performer in the MOSFET market, offering superior performance and reliability for a wide range of applications.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP270N8F7 Documents

Download datasheets and manufacturer documentation for STP270N8F7

Ersa TO-220 ECOPACK 2 graded moulding compound assembly capacity expansion - Subcontractor PSI Laguna (Philippines) (PDF)       Product / Process Change Notification (PDF)       Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

Shopping Guide

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